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ORCIDJun Gyu Lee 0002
Person information
- affiliation: Samsung Electronics, Hwaseong, South Korea
- affiliation (former): Hynix Semiconductor, Icheon, South Korea
- affiliation (until 2008): Sogang University, Seoul, South Korea
Other persons with the same name
- Jun Gyu Lee 0001 — Tohoku University, Research Institute of Electrical Communication, Sendai, Japan
- Jungyu Lee 0001 — Chung-Ang University, Seoul, South Korea
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2020 – today
- 2023
[j2]Yesin Ryu
, Sung-Gi Ahn, Jae Hoon Lee, Jaewon Park, Yong-Ki Kim, Hyochang Kim, Yeong Geol Song, Han-Won Cho, Sunghye Cho, Seung Ho Song, Haesuk Lee, Useung Shin, Jonghyun Ahn, Je-Min Ryu, Suk Han Lee, Kyounghwan Lim, Jungyu Lee, Jeong Hoan Park, Jae-Seung Jeong, Sunghwan Jo, Dajung Cho, Sooyoung Kim, Minsu Lee, Hyunho Kim, Minhwan Kim, Jae San Kim, Jinah Kim, Hyun Gil Kang, Myung-Kyu Lee, Sung-Rae Kim, Young-Cheon Kwon, Young-Yong Byun, Kijun Lee, Sangkil Park, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee:
A 16 GB 1024 GB/s HBM3 DRAM With Source-Synchronized Bus Design and On-Die Error Control Scheme for Enhanced RAS Features. IEEE J. Solid State Circuits 58(4): 1051-1061 (2023)- 2022
- [c4]Moosung Kim, Sung-Won Yun, Jungjune Park, Hyun Kook Park, Jungyu Lee, Yeong Seon Kim, Dae-Hoon Na, Sara Choi, Youngsun Song, Jonghoon Lee, Hyun-Jun Yoon, Kangbin Lee, Byunghoon Jeong, Sanglok Kim, Junhong Park, Cheon An Lee, Jaeyun Lee, Ji-Sang Lee, Jin Young Chun, Joonsuc Jang, Younghwi Yang, Seung Hyun Moon, Myung-Hoon Choi, Wontae Kim, Jungsoo Kim, Seok-Min Yoon, Pansuk Kwak, Myunghun Lee, Raehyun Song, Sunghoon Kim, Chiweon Yoon, Dongku Kang, Jin-Yub Lee, Jai Hyuk Song:
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface. ISSCC 2022: 136-137 - [c3]Yesin Ryu, Young-Cheon Kwon, Jae Hoon Lee, Sung-Gi Ahn, Jaewon Park, Kijun Lee, Yu Ho Choi, Han-Won Cho, Jae San Kim, Jungyu Lee, Haesuk Lee, Seung Ho Song, Je-Min Ryu, Yeong Ho Yun, Useung Shin, Dajung Cho, Jeong Hoan Park, Jae-Seung Jeong, Suk Han Lee, Kyounghwan Lim, Tae-Sung Kim, Kyungmin Kim, Yu Jin Cha, Ik Joo Lee, Tae Kyu Byun, Han Sik Yoo, Yeong Geol Song, Myung-Kyu Lee, Sunghye Cho, Sung-Rae Kim, Ji-Min Choi, Hyoungmin Kim, Soo Young Kim, Jaeyoun Youn, Myeong-O. Kim, Kyomin Sohn, SangJoon Hwang, JooYoung Lee:
A 16 GB 1024 GB/s HBM3 DRAM with On-Die Error Control Scheme for Enhanced RAS Features. VLSI Technology and Circuits 2022: 130-131 - 2021
- [j1]Ki Chul Chun, Yong-Ki Kim, Yesin Ryu, Jaewon Park, Chi Sung Oh, Young-Yong Byun, So-Young Kim, Dong-Hak Shin, Jun Gyu Lee, Byung-Kyu Ho, Min-Sang Park, Seong-Jin Cho, Seunghan Woo, Byoung-Mo Moon, Beomyong Kil, Sungoh Ahn, Jae Hoon Lee, Sooyoung Kim, Seouk-Kyu Choi, Jae-Seung Jeong, Sung-Gi Ahn, Jihye Kim, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Jung-Bae Lee:
A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme. IEEE J. Solid State Circuits 56(1): 199-211 (2021) - 2020
- [c2]Chi-Sung Oh, Ki Chul Chun, Young-Yong Byun, Yong-Ki Kim, So-Young Kim, Yesin Ryu, Jaewon Park, Sinho Kim, Sang-uhn Cha, Dong-Hak Shin, Jungyu Lee, Jong-Pil Son, Byung-Kyu Ho, Seong-Jin Cho, Beomyong Kil, Sungoh Ahn, Baekmin Lim, Yong-Sik Park, Kijun Lee, Myung-Kyu Lee, Seungduk Baek, Junyong Noh, Jae-Wook Lee, Seungseob Lee, Sooyoung Kim, Bo-Tak Lim, Seouk-Kyu Choi, Jin-Guk Kim, Hye-In Choi, Hyuk-Jun Kwon, Jun Jin Kong, Kyomin Sohn, Nam Sung Kim, Kwang-Il Park, Jung-Bae Lee:
22.1 A 1.1V 16GB 640GB/s HBM2E DRAM with a Data-Bus Window-Extension Technique and a Synergetic On-Die ECC Scheme. ISSCC 2020: 330-332
2010 – 2019
- 2012
- [c1]Kibong Koo, Sunghwa Ok, Yonggu Kang, Seungbong Kim, Choungki Song, Hyeyoung Lee, Hyungsoo Kim, Yongmi Kim, Jeonghun Lee, Seunghan Oak, Yosep Lee, Jungyu Lee, Joongho Lee, Hyungyu Lee, Jaemin Jang, Jongho Jung, Byeongchan Choi, Yong-Ju Kim, Youngdo Hur, Yunsaing Kim, Byong-Tae Chung, Yongtak Kim:
A 1.2V 38nm 2.4Gb/s/pin 2Gb DDR4 SDRAM with bank group and ×4 half-page architecture. ISSCC 2012: 40-41
Coauthor Index
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