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"16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide ..."

Takanori Matsuzaki et al. (2015)

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DOI: 10.1109/ISSCC.2015.7063048

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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  - conf/isscc/MatsuzakiONIIIY15
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  - https://dblp.org/rec/conf/isscc/MatsuzakiONIIIY15
Takanori Matsuzaki, Tatsuya Onuki, Shuhei Nagatsuka, Hiroki Inoue, Takahiko Ishizu, Yoshinori Ieda, Naoto Yamade, Hidekazu Miyairi, Masayuki Sakakura, Tomoaki Atsumi, Yutaka Shionoiri, Kiyoshi Kato, Takashi Okuda, Yoshitaka Yamamoto, Masahiro Fujita, Jun Koyama, Shunpei Yamazaki:
16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method. ISSCC 2015: 1-3

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