"Origin of high data retention for Ge1Cu2Te3 phase-change memory."

Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li (2015)

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DOI: 10.1109/NVMTS.2015.7457485

access: closed

type: Conference or Workshop Paper

metadata version: 2021-10-14

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Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li:
Origin of high data retention for Ge1Cu2Te3 phase-change memory. NVMTS 2015: 1-4

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