"Reliability of high-speed SiGe: C HBT under electrical stress close to the ..."

Thomas Jacquet et al. (2015)

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DOI: 10.1016/J.MICROREL.2015.06.092

access: closed

type: Journal Article

metadata version: 2020-02-22

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Thomas Jacquet, Grazia Sasso, Anjan Chakravorty, Niccolò Rinaldi, Klaus Aufinger, Thomas Zimmer, Vincenzo d'Alessandro, Cristell Maneux:
Reliability of high-speed SiGe: C HBT under electrical stress close to the SOA limit. Microelectron. Reliab. 55(9-10): 1433-1437 (2015)

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