"Evidence that N2O is a stronger oxidizing agent than ..."

W. S. Lau et al. (2007)

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DOI: 10.1016/J.MICROREL.2006.05.018

access: closed

type: Journal Article

metadata version: 2020-02-22

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W. S. Lau, P. W. Qian, Taejoon Han, Nathan P. Sandler, S. T. Che, S. E. Ang, C. H. Tung, T. T. Sheng:
Evidence that N₂O is a stronger oxidizing agent than O₂ for both Ta₂O₅ and bare Si below 1000degreeC and temperature for minimum low-K interfacial oxide for high-K dielectric on Si. Microelectron. Reliab. 47(2-3): 429-433 (2007)

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