"Scalability comparison between raised- and embedded-SiGe source/drain ..."

Shimpei Yamaguchi et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.03.006

access: closed

type: Journal Article

metadata version: 2023-09-30

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Shimpei Yamaguchi, Liesbeth Witters, Jérôme Mitard, Geert Eneman, Geert Hellings, Andriy Hikavyy, Roger Loo, Naoto Horiguchi:
Scalability comparison between raised- and embedded-SiGe source/drain structures for Si_0.55Ge_0.45 implant free quantum well pFET. Microelectron. Reliab. 83: 157-161 (2018)

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