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Chul Seung Lim

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2010 – 2019

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2018
[j3]
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Chul Seung Lim, Kyungbae Park, GeunYong Bak, Donghyuk Yun, Myungsang Park, Sanghyeon Baeg, Shi-Jie Wen, Richard Wong:
Study of proton radiation effect to row hammer fault in DDR4 SDRAMs. Microelectron. Reliab. 80: 85-90 (2018)
[c2]
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Donghyuk Yun, Myungsang Park, Chul Seung Lim, Sanghyeon Baeg:
Study of TID effects on one row hammering using gamma in DDR4 SDRAMs. IRPS 2018: 2-1
2017
[j2]
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Saqib A. Khan, Chul Seung Lim, GeunYong Bak, Sanghyeon Baeg, Soonyoung Lee:
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation. Microelectron. Reliab. 69: 100-108 (2017)
2016
[j1]
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Kyungbae Park, Chul Seung Lim, Donghyuk Yun, Sanghyeon Baeg:
Experiments and root cause analysis for active-precharge hammering fault in DDR3 SDRAM under 3 × nm technology. Microelectron. Reliab. 57: 39-46 (2016)
2012
[c1]
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Sanghyeon Baeg, Jongsun Bae, Soonyoung Lee, Chul Seung Lim, Sang Hoon Jeon, Hyeonwoo Nam:
Soft Error Issues with Scaling Technologies. Asian Test Symposium 2012: 68

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