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Nahid M. Hossain

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affiliation: University of Missouri-Kansas City, MO, USA

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2010 – 2019

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2018
[c14]
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Nahid M. Hossain, Ritesh Kumar Reddy Kuchukulla, Masud H. Chowdhury:
Failure Analysis of the Through Silicon Via in Three-dimensional Integrated Circuit (3D-IC). ISCAS 2018: 1-4
[c13]
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Mahmood Uddin Mohammed, Nahid M. Hossain, Masud H. Chowdhury:
A Disturb Free Read Port 8T SRAM Bitcell Circuit Design with Virtual Ground Scheme. MWSCAS 2018: 412-415
2017
[c12]
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Abdul Hamid Bin Yousuf, Nahid M. Hossain, Masud H. Chowdhury:
Impacts of different shapes of through-silicon-via core on 3D IC performance. ISCAS 2017: 1-4
[c11]
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  - conf/mwscas/VemulaHC17
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Lohith Kumar Vemula, Nahid M. Hossain, Masud H. Chowdhury:
Error free sense amplifier circuit design for STT-MRAM nonvolatile memory. MWSCAS 2017: 703-706
[c10]
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Lohith Kumar Vemula, Nahid M. Hossain, Masud H. Chowdhury:
Emerging STT-MRAM circuit and architecture co-design in 45nm technology. MWSCAS 2017: 719-722
[c9]
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Nahid M. Hossain, Emeshaw Ashenafi, Moqbull Hossen, Azzedin D. Es-Sakhi, Masud H. Chowdhury:
Multilayer graphene nanoribbon based BioFET sensor design. MWSCAS 2017: 1402-1405
[c8]
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Nahid M. Hossain, Arif Iqbal, Hemanshu Shishupal, Masud H. Chowdhury:
Tunneling transistor based 6T SRAM bitcell circuit design in sub-10nm domain. MWSCAS 2017: 1485-1488
2015
[j1]
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Nahid M. Hossain, Masud H. Chowdhury:
Multilayer Graphene Nanoribbon and Carbon Nanotube Based Floating Gate Transistor for Nonvolatile Flash Memory. ACM J. Emerg. Technol. Comput. Syst. 12(1): 2:1-2:17 (2015)
[c7]
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Abdul Hamid Bin Yousuf, Nahid M. Hossain, Masud H. Chowdhury:
Performance analysis of through silicon via (TSV) and through glass via (TGV) for different materials. ISCAS 2015: 1957-1960
[c6]
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Nahid M. Hossain, Jitendra Koppu, Masud H. Chowdhury:
Analysis of radiation effect on the threshold voltage of flash memory device. ISCAS 2015: 2896-2899
[c5]
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Ritesh Chowdri, Nahid M. Hossain, Masud H. Chowdhury:
High-speed graphene based quantum-optical interconnect design. MWSCAS 2015: 1-4
2014
[c4]
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Nahid M. Hossain, Masud H. Chowdhury:
Multilayer graphene nanoribbon floating gate transistor for flash memory. ISCAS 2014: 806-809
[c3]
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Nahid M. Hossain, Masud H. Chowdhury:
Graphene and CNT based flash memory: Impacts of scaling control and tunnel oxide thickness. MWSCAS 2014: 985-988
[c2]
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Nahid M. Hossain, Md Belayat Hossain, Masud H. Chowdhury:
Multilayer layer graphene nanoribbon flash memory: Analysis of programming and erasing operation. SoCC 2014: 24-28
2013
[c1]
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Nahid M. Hossain, MunEm Hossain, Abdul Hamid Bin Yousuf, Masud H. Chowdhury:
Thermal aware Graphene based Through Silicon Via design for 3D IC. 3DIC 2013: 1-4

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