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2020 – today
- 2023
[c3]Youngmin Jo, Anil Kavala, Tongsung Kim, Byung-Kwan Chun, Jungjune Park, Taesung Lee, Jungmin Seo, Manjae Yang, Taehyeon Park, Hyunjin Kwon, Cheolhui Lee, Younghoon Son, Junghwan Kwak, Younggyu Lee, Hwan-Seok Ku, Dae-Hoon Na, Changyeon Yu, Jonghoon Park, Jae-Hwan Kim, Hyojin Kwon, Chan-ho Kim, Moon-Ki Jung, Chanjin Park, Donghyun Seo, Moosung Kim, Seungjae Lee, Jin-Yub Lee, Dongku Kang, Chiweon Yoon, Sunghoi Hur:
A 3.0 Gb/s/pin 4th generation F-chip with Toggle 5.0 Specification for 16Tb NAND Flash Memory Multi chip Package. VLSI Technology and Circuits 2023: 1-2- 2022
- [j1]Sung-Bae Jun
, Chan-ho Kim, Jin Hwan Lee, Jun-Kyu Kang, Yong-Jae Kim, Sang-Yong Jung:
Parameter Optimization for Reducing Torque Ripple and Harmonic Losses of Multi-Layered Interior Permanent-Magnet Synchronous Motors. IEEE Access 10: 10536-10552 (2022) - 2020
- [c2]Jang-Woo Lee, Dae-Hoon Na, Anil Kavala, Hwasuk Cho, Junha Lee, Manjae Yang, Eunjin Song, Tongsung Kim, Seon-Kyoo Lee, Dong-Su Jang, Byung-Kwan Chun, Youngmin Jo, Sunwon Jung, Doo-Il Jung, Chan-ho Kim, Daewoon Kang, Tae-Sung Lee, Byunghoon Jeong, Chiweon Yoon, Dongku Kang, Seungjae Lee, Jungdon Ihm, Dae-Seok Byeon, Jin-Yup Lee, Sangjoon Hwang, Jai Hyuk Song:
A 1.8 Gb/s/pin 16Tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems. VLSI Circuits 2020: 1-2
2010 – 2019
- 2016
- [c1]Seungjae Lee, Jin-Yub Lee, Il-Han Park, Jong-Yeol Park, Sung-Won Yun, Minsu Kim, Jong-Hoon Lee, Min-Seok Kim, Kangbin Lee, Taeeun Kim, Byungkyu Cho, Dooho Cho, Sangbum Yun, Jung-No Im, Hyejin Yim, Kyung-Hwa Kang, Suchang Jeon, Sungkyu Jo, Yang-Lo Ahn, Sung-Min Joe, Suyong Kim, Deok-kyun Woo, Jiyoon Park, Hyun Wook Park, Youngmin Kim, Jonghoon Park, Yongsu Choi, Makoto Hirano, Jeong-Don Ihm, Byunghoon Jeong, Seon-Kyoo Lee, Moosung Kim, Hokil Lee, Sungwhan Seo, Hongsoo Jeon, Chan-ho Kim, Hyunggon Kim, Jintae Kim, Yongsik Yim, Hoosung Kim, Dae-Seok Byeon, Hyang-Ja Yang, Ki-Tae Park, Kyehyun Kyung, Jeong-Hyuk Choi:
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate. ISSCC 2016: 138-139
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