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ORCIDInga A. Fischer
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2020 – today
- 2023
[d1]Oliver Steuer, Maciej Oskar Liedke
, Maik Butterling, D. Schwarz, J. Schulze, Z. Li, Andreas Wagner, Inga A. Fischer, René Hübner, Shengqiang Zhou, Manfred Helm, G. Cuniberti, Yordan M. Georgiev, Slawomir Prucnal:
Evolution of point defects in pulsed-laser-melted Ge1-xSnx probed by positron annihilation lifetime spectroscopy. RODARE, 2023
- 2022
- [j1]Yasmine Elogail, Fritz Berkmann, Caterina J. Clausen, Inga A. Fischer, Linda A. Hänel, Daniel Schwarz, Jörg Schulze:
Investigation of Ge-Based P-Channel Planar-Doped Barrier FETs integrated on Si. Microelectron. J. 123: 105404 (2022) - 2021
- [c8]Fritz Berkmann, M. Ayasse, F. Mörz, Inga A. Fischer, Jörg Schulze:
Titanium and Nickel as alternative materials for mid Infrared Plasmonic. MIPRO 2021: 36-39 - [c7]David Weißhaupt, Hannes S. Funk, Christoph Sürgers, Gerda Fischer, Michael Oehme, Daniel Schwarz, Inga A. Fischer, Joris van Slageren, Jörg Schulze:
Formation of Mn5Ge3 on a Recess-Etched Ge (111) Quantum-Well Structure for Semiconductor Spintronics. MIPRO 2021: 45-49
2010 – 2019
- 2018
- [c6]Yuma Kawaguchi, Lion Augel, H. Uchida, M. Inoue, Jörg Schulze, Inga A. Fischer:
Simulation-based optimization of Ge-PIN-photodiodes with Al nanohole arrays for refractive index sensing. MIPRO 2018: 23-26 - [c5]Linda A. Hänel, Yasmine Elogail, Daniel Schwarz, Inga A. Fischer, Jörg Schulze:
Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-virtual-substrate on Si(001). MIPRO 2018: 27-31 - [c4]Fritz Berkmann, Lion Augel, M. B. Schilling, Audrey Berrier, Daniel Schwarz, David Weißhaupt, Michael Oehme, Jörg Schulze, Inga A. Fischer:
Optical characterization of highly n-type doped Ge0.95Sn0.05 rod antennas on Si(001) substrates. MIPRO 2018: 32-35 - 2017
- [c3]J. Schlipf, J. L. Frieiro, Inga A. Fischer, C. Serra, Jörg Schulze, Stefano Chiussi:
Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy. MIPRO 2017: 37-42 - [c2]Erlend G. Rolseth, Andreas Blech, Inga A. Fischer, Youssef Hashad, Roman Koerner, Konrad Kostecki, Aleksei Kruglov, V. S. Senthil Srinivasan, Mathias Weiser, Torsten Wendav, Kurt Busch, Jörg Schulze:
Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges. MIPRO 2017: 57-65 - 2016
- [c1]Inga A. Fischer, Filipe Oliveira, Alessandro Benedetti, Stefano Chiussi, Jörg Schulze:
(Si)GeSn nanostructures for optoelectronic device applications. MIPRO 2016: 1-4
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