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ORCIDGwanhyeob Koh
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2020 – today
- 2020
[c3]El Mehdi Boujamaa, Samsudeen Mohamed Ali, Steve Ngueya Wandji, Alexandra Gourio, Suk-Soo Pyo, Gwanhyeob Koh, Yoonjong Song, Taejoong Song, Jongwook Kye, Jean-Christophe Vial, Andrew Sowden, Manuj Rathor, Cyrille Dray:
A 14.7Mb/mm2 28nm FDSOI STT-MRAM with Current Starved Read Path, 52Ω/Sigma Offset Voltage Sense Amplifier and Fully Trimmable CTAT Reference. VLSI Circuits 2020: 1-2
2010 – 2019
- 2019
- [c2]Y. Ji, H. J. Goo, J. Lim, S. B. Lee, S. Lee, Taiki Uemura, J. C. Park, S. I. Han, S. C. Shin, J. H. Lee, Y. J. Song, K. M. Lee, H. M. Shin, S. H. Hwang, B. Y. Seo, Y. K. Lee, J. C. Kim, Gwanhyeob Koh, K. C. Park, Sangwoo Pae, Gi-Tae Jeong, J. S. Yoon, E. S. Jung:
Reliability of 8Mbit Embedded-STT-MRAM in 28nm FDSOI Technology. IRPS 2019: 1-3 - 2017
- [c1]Artur Antonyan
, Suk-Soo Pyo, Hyuntaek Jung, Gwanhyeob Koh, Taejoong Song:
28-nm 1T-1MTJ 8Mb 64 I/O STT-MRAM with symmetric 3-section reference structure and cross-coupled sensing amplifier. ISCAS 2017: 1-4
2000 – 2009
- 2005
- [j3]Woo Yeong Cho, Beak-Hyung Cho, Byung-Gil Choi, Hyung-Rok Oh, Sangbeom Kang, Ki-Sung Kim, Kyung-Hee Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Youngnam Hwang, SuJin Ahn, Gwan-Hyeob Koh, Gitae Jeong, Hongsik Jeong, Kinam Kim:
A 0.18-μm 3.0-V 64-Mb nonvolatile phase-transition random access memory (PRAM). IEEE J. Solid State Circuits 40(1): 293-300 (2005) - 2003
- [j2]Gitae Jeong, Wooyoung Cho, Sujin Ahn, Hongsik Jeong, Gwanhyeob Koh, Youngnam Hwang, Kinam Kim:
A 0.24-μm 2.0-V 1T1MTJ 16-kb nonvolatile magnetoresistance RAM with self-reference sensing scheme. IEEE J. Solid State Circuits 38(11): 1906-1910 (2003) - 2002
- [j1]Yongseok Ahn, Sanghyun Lee, Gwanhyeob Koh, Taeyoung Chung, Kinam Kim:
The abnormality in gate oxide failure induced by stress-enhanced diffusion of polycrystalline silicon. Microelectron. Reliab. 42(3): 349-354 (2002)
Coauthor Index
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