"Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and ..."

Z. Lin et al. (2024)

> Home

Details and statistics

DOI: 10.1109/VLSITECHNOLOGYANDCIR46783.2024.10631533

access: closed

type: Conference or Workshop Paper

metadata version: 2024-10-17

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/vlsit/LinZNDXILSHHWAY24
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/vlsit/LinZNDXILSHHWAY24
Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, Daewon Ha, H. Wang, M. A. Alam, P. D. Ye:
Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory. VLSI Technology and Circuits 2024: 1-2

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.