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"The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well ..."

Jizuo Zhang et al. (2019)

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DOI: 10.3390/SYM11020154

access: open

type: Journal Article

metadata version: 2019-03-27

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  dblp key:
  - journals/symmetry/ZhangCHLF19
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  - https://dblp.org/rec/journals/symmetry/ZhangCHLF19
Jizuo Zhang, Jianjun Chen, Pengcheng Huang, Shouping Li, Liang Fang:
The Effect of Deep N+ Well on Single-Event Transient in 65 nm Triple-Well NMOSFET. Symmetry 11(2): 154 (2019)

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