Improvement of saturation characteristics of a frequency-demodulation CMOS image sensor

With the scaling of transistor dimensions, thinner gate oxides results in exponential increases in gate tunneling current and static standby power consumption of CMOS circuits is severely affected by the presence of gate tunneling currents. In this ...

This paper highlights an effort to study the characteristics of silicon CMOS nanowire transistor and the effect of cross-sectional area of PMOS transistor on silicon nanowire-CMOS inverter characteristics. In this study generated MATLAB code is used ...

The design of analog integrated circuits together with mixed-signal applications in deep sub-micron technologies is a difficult task, since state-of-the-art technologies and minimum channel length transistors, suitable for digital circuits, are very ...