Structural stability, electronic structure, and novel transport properties with high thermoelectric performances of ZrIrX (X $$=$$= As, Bi, and Sb)
We use the first-principles-based density functional theory with full potential linearized augmented plane wave method to investigate the structural, elastic, electronic, and thermoelectric properties of ZrIrAs, ZrIrBi, and ZrIrSb. The calculated ...
Magnetic properties of bilayer graphene: a Monte Carlo study
The lattice structure of bilayer graphene atoms within the same layer is studied by Monte Carlo simulations. The ground-state phase diagrams of mixed spin-2 and spin-3/2 with Ising model on a bilayer graphene are investigated using the Monte Carlo ...
Self-energy of cold atoms in a long-range disordered optical potential
We study the effect of correlation on the expansion of a Bose---Einstein condensate (BEC) released from a harmonic trap. We go beyond the first-order Born approximation (FBA) to use the self-consistent Born approximation (SCBA) to calculate the self-...
Group III---V ternary compound semiconductor materials for unipolar conduction in tunnel field-effect transistors
A distinct materials combination is presented for tunnel field-effect transistors (TFETs): gallium arsenide phosphide (GaAsP) as a wider-bandgap material in the drain and channel regions with indium gallium arsenide (InGaAs) as a narrow-bandgap material ...
Heterogate junctionless tunnel field-effect transistor: future of low-power devices
Gate dielectric materials play a key role in device development and study for various applications. We illustrate herein the impact of hetero (high-k/low-k) gate dielectric materials on the ON-current ($$I_{\mathrm{ON}}$$ION) and OFF-current ($$I_{\...
Double aperture double-gate vertical high-electron-mobility transistor
In this paper, we propose a double aperture double-gate AlGaN/GaN vertical high-electron-mobility transistor (HEMT) to improve the device characteristics, such as the current and the ON resistance ($$\hbox {\textit{R}}_{\mathrm{ON}}$$RON). The proposed ...
Modeling gate-all-around Si/SiGe MOSFETs and circuits for digital applications
Apart from excellent electrostatic capability and immunity to short-channel effects, the performance of gate-all-around (GAA) nanowire (NW) metal-oxide-semiconductor field-effect transistors (MOSFETs) can be further enhanced by incorporating strain. ...
Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFET
This paper examines the bias-independent and bias-dependent extrinsic and intrinsic parameters of the gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) metal---oxide---semiconductor field-effect transistor (MOSFET) by considering ...
Gate and drain SEU sensitivity of sub-20-nm FinFET- and Junctionless FinFET-based 6T-SRAM circuits by 3D TCAD simulation
Scaling of metal---oxide---semiconductor field-effect transistors (MOSFETs) to below a few tens of nanometer has failed to make significant improvements. FinFETs were introduced to replace MOS devices in circuits, offering good performance improvement ...
Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate
- Kun Cheng,
- Shengdong Hu,
- Yuyu Jiang,
- Qi Yuan,
- Dong Yang,
- Ye Huang,
- Jianmei Lei,
- Zhi Lin,
- Xichuan Zhou,
- Fang Tang
An ultra-low specific on-resistance $$(R_\mathrm{{on,sp}})$$(Ron,sp) trench SOI LDMOS with a floating vertical field plate structure (FVFPT SOI) is proposed in this paper. A floating vertical plate (FVFP) is introduced into the filled oxide trench of a ...
Application of generalized logistic functions in surface-potential-based MOSFET modeling
An improved surface-potential-based metal---oxide---semiconductor field-effect transistor (MOSFET) model is presented. The improvement consists in introducing a new generalized logistic functional form for the smoothing factor that allows for a ...
A modified nanoelectronic spiking neuron model
Spiking neural networks (SNNs) first came to the attention of scientists due to the search for a structure capable of emulating more closely the behavior of the human brain. The biological nervous system has some characteristics that allow it to process ...
Design and performance analysis of a CNFET-based TCAM cell with dual-chirality selection
The carbon nanotube field-effect transistor (CNFET) is emerging as one of the most promising alternatives to complementary metal---oxide---semiconductor (CMOS) transistors due to its one-dimensional (1-D) band structure, low off-current capability, near-...
A GMR device based on a magnetic nanostructure with a $$\updelta $$ź-doping
We study how to manipulate by the $$\updelta $$ź-doping a giant magnetoresistance (GMR) device, which can be realized experimentally by depositing two parallel ferromagnetic stripes on top and bottom of the semiconductor $$\hbox {GaAs/Al}_{x}\hbox {Ga}_{...
A simulation study of voltage-assisted low-energy switching of a perpendicular anisotropy ferromagnet on a topological insulator
We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, $$\hbox {Bi}_{2}\hbox {Se}_{3}$$Bi2Se3. The ferromagnetic layer has perpendicular anisotropy, due to MgO deposited on its ...
Computational study of transport properties of graphene upon adsorption of an amino acid: importance of including ---$$\hbox {NH}_{2}$$NH2 and ---COOH groups
The effects of histidine and its imidazole ring adsorption on the electronic transport properties of graphene were investigated by first-principles calculations within a combination of density functional theory and non-equilibrium Greens functions. ...
Modeling the performance characteristics of ZnO-based heterojunction photodetectors
We propose and experimentally validate a theoretical closed-form modeling procedure for ZnO-based heterojunction ultraviolet (UV) photodetectors. To do so, we first employ a deposition and growth method based on chemical bath deposition for a typical ...
Design of plasmonic half-adder and half-subtractor circuits employing nonlinear effect in Mach---Zehnder interferometer
Plasmonic metal---insulator---metal (MIM) waveguides have the unique attribute of propagating surface plasmons beyond the diffraction limit. In this paper, basic designs for half-adder and half-subtractor circuits are proposed based on the nonlinear ...
Accuracy balancing for the finite-difference-based solution of the discrete Wigner transport equation
The Wigner transport equation based on the Wigner function which is defined on the phase space describes two actions in orthogonal directions of the phase space: movement (diffusion) in position space and transition in momentum space. Here, we show that ...
Nanoscale circuit implementation using tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications
In this work, the potential benefit of tri-metal gate engineered nanowire MOSFET with gate stack for analog/RF applications is developed and presented. A systematic, quantitative investigation of main figure of merit for the device is carried out to ...
A multi-objective synthesis methodology for majority/minority logic networks
New technologies such as quantum-dot cellular automata, single-electron tunneling, tunneling phase logic, and all-spin logic devices have been widely advocated in nanotechnology as a response to the physical limits associated with complementary metal---...
Thermal conductivity reduction by embedding nanoparticles
Reduction of thermal conductivity is important to enhance the performance of thermoelectric materials. One possible way to achieve this goal consists in embedding nanoparticles in the material, since they act as extrinsic phonon-scattering centers. In ...
Analytical model for 4H-SiC superjunction drift layer with anisotropic properties for ultrahigh-voltage applications
We implemented an analytical model for a 4H-silicon carbide (4H-SiC) superjunction (SJ) drift layer with the anisotropic properties for ultrahigh-voltage-level applications. Since the properties of 4H-SiC vary with wafer orientation, we employed an ...
Electromechanical modeling of stretchable interconnects
No methods describing the variation of the electrical properties of stretchable interconnects depending on their extension are available for use in the design and technology transfer process of flexible electronic systems. A calculation method to ...
Asymmetrically fed octagonal Sierpinski band-notched super-wideband antenna
A compact microstrip-line-fed octagonal Sierpinski band-notched super-wideband (SWB) fractal antenna is presented. It comprises an asymmetrical feedline and rectangular ground plane loaded with a single rectangular notch. An impedance bandwidth of 3.87--...
