Journal of Computational Electronics

The scaling of MOSFETs is an important and effective way for achieving high performance and low power consumption. One of the bottlenecks for scaling is the physical gate oxide thickness. This paper presents and evaluates a new method for scaling carbon ...

In recent years, significant of scientific research effort has focused on the investigation of transition metal dichalcogenides (TMDC) and other two-dimensional (2D) materials like graphene or boron nitride. Theoretical investigation on the physical ...

The gate-all-around (GAA) CNTFET is one of the most efficient types of CNTFETs which provides the conditions for scaling the technology to 10 nm and beyond, due to the extraordinary features of carbon nanotubes and the superior gate control through a ...

Recent experimental studies have shown that sulfur vacancies in monolayer $$\hbox {MoS}_{2}$$MoS2 are mobile under exposure to an electron beam and tend to accumulate as sulfur line vacancies (Komsa in Phys Rev B 88: 035301, 2013). In this work, we ...

The geometrical, electronic, and optical properties of 11 superhard C---N structures were investigated using density functional theory. The lattice parameters and energy bandgaps were calculated and compared with theoretical reports in literature. The ...

Recently, $$\hbox {Gd}_{2}\hbox {O}_{3}$$Gd2O3 has gained considerable interest in industry, and its optical applications have been of interest in optoelectronic. The band structure and optical properties of cubic $$\hbox {Gd}_{2}\hbox {O}_{3}$$Gd2O3 ...

First-principles calculations were performed to investigate the electrical and optical properties of $$\hbox {In}_{29}\hbox {Sn}_{3}\hbox {O}_{48}$$In29Sn3O48 with Sn-doped $$\hbox {In}_{2}\hbox {O}_{3}$$In2O3 and $$\hbox {InGaZnO}_{4}$$InGaZnO4 (IGZO). ...

A novel high-performance H-shape-gate U-shape-channel junctionless FET (HGUC JL FET) is proposed. Compared with the saddle junctionless FET, the proposed HGUC JL FET shows better subthreshold characteristics and higher on-current. Its electrical ...

A simple small-signal model of the single-electron transistor is presented. The terminal voltage variations are considered to be sufficiently small to result in small current variations that can be expressed using linearized relations. The derivation of ...

In this work, the response of the Si nanotube (SiNT) field-effect transistor (FET) to heavy-ion irradiation is investigated using three-dimensional (3D) numerical simulations. The single-event transient (SET) is studied to determine the sensitive ...

Using density functional theory and the non-equilibrium Green's function formalism, the transport and CO adsorption properties of $$\hbox {CeO}_{2}$$CeO2 molecular device are studied. The band structure shows that $$\hbox {CeO}_{2}$$CeO2 nanostructure ...

Stochastic models and simulation algorithms for spatially separated reactants in the vicinity of traps were developed. The methods were applied to simulate electron---hole recombination in inhomogeneous semiconductors. Continuous kinetic Monte Carlo ...

The spin-dependent electronic transport properties in the molecular junctions based on ethynyl-connected biferrocene are investigated by density functional theory combined with nonequilibrium Green's function. The calculated results show that the ...

We theoretically investigated the electron-spin transport properties of an antiparallel double $$\updelta $$ź-magnetic-barrier nanostructure modulated by spin---orbit coupling (SOC), which could be fabricated experimentally by depositing two ...

Printed microstrip-fed antennas based on a slotted radiating patch are proposed herein. First, a basic rectangular antenna without any slots was designed, being suitable for wideband applications and showing impedance bandwidth of 2714 MHz for $$S_{11} <...

A modification of effective medium theory for two-component nonmagnetic metal---dielectric metamaterials is developed for use in the microwave frequency range. The metamaterial is represented as an unbounded isotropic dielectric host material with ...

We propose a global simulation scheme for studying the output characteristics of quantum cascade lasers subjected to near-infrared optical pulses with a wide range of injection powers. We treat nonresonant excitations where the photon energy of the ...

A kind of magnetic field sensor (MFS) using a two-dimensional (2D) magnetic photonic crystal (MPC) slab waveguide as the sensing structure is proposed and investigated numerically. The slab structure is based on bismuth iron garnet (BIG), a well-known ...

Triplet-based spike-timing-dependent plasticity (TSTDP) is an advanced synaptic plasticity rule that results in improved learning capability compared to the conventional pair-based STDP (PSTDP). The TSTDP rule can reproduce the results of many ...

DNA nucleobases strongly absorbed onto a graphene sheet placed between two gold electrodes in a contact---channel---contact configuration were distinguished. We analyzed the system using the nonequilibrium Green's function method combined with density ...

Development of bioinspired devices for energy-efficient computing requires numerical models that can reproduce the global electrical behavior of neurons. We present herein a stochastic model based on the Monte Carlo technique that can reproduce the ...

The Poisson---Nernst---Planck (PNP) equations have recently been used to describe the dynamics of ion transport through biological ion channels besides being widely employed in semiconductor industry. This paper is about the design of a numerical scheme ...

Reversible logic has attracted interest from many researchers in the area of quantum information science. Since there is no information loss in reversible logic, energy consumption is greatly reduced. However, realization of quantum equivalent circuits ...

Conventional digital circuits consume a considerable amount of energy. If bits of information remain during logical operations, power consumption decreases considerably because the data bits in reversible computations are not lost. The types of ...

The limitations of complementary metal---oxide---semiconductor (CMOS) technology on the nanoscale will prevent continuation of the current scaling trends in very large-scale integration (VLSI). Quantum-dot cellular automata (QCA) are one of the emerging ...