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- research-articleNovember 2015
On the Restore Operation in MTJ-Based Nonvolatile SRAM Cells
IEEE Transactions on Very Large Scale Integration (VLSI) Systems (ITVL), Volume 23, Issue 11Pages 2695–2699https://doi.org/10.1109/TVLSI.2014.2375333This brief investigates the Restore mechanism of a nonvolatile static random access memory (NVSRAM) cell that utilizes two magnetic tunneling junctions (MTJs) as nonvolatile resistive elements and a 6T SRAM core. Two cells are proposed by employing ...
- research-articleJune 2015
On the Nonvolatile Performance of Flip-Flop/SRAM Cells With a Single MTJ
IEEE Transactions on Very Large Scale Integration (VLSI) Systems (ITVL), Volume 23, Issue 6Pages 1160–1164https://doi.org/10.1109/TVLSI.2014.2322511In this brief, three nonvolatile flip-flop (FF)/SRAM cells that utilize a single magnetic tunneling junction (MTJ) as nonvolatile resistive element are proposed. These cells have the same core (i.e., 6T) but they employ different numbers of MOSFETs to ...
