Abstract
In this article, an investigation has been carried out to determine the trap density and trap energy level using parallel conductance method for AlGaN/GaN HEMT epitaxial structure. Capacitance-Voltage (C–V) and Conductance-Voltage (G–V) measurements with frequency (1 kHz – 10 MHz) and temperature (25 and 250 °C) variations have been performed on large area Schottky pad having area 150 µm2 × 150 µm2. Two different types of traps have been observed with different time constants and densities. In the low frequency range between 1 and 10 kHz slow traps with density (2.79 × 1012–1.79 × 1013 cm−2) and time constant (~0.159 ms) at an energy level of 0.39 eV from EC have been observed whereas in the high frequency range greater than 1 MHz a continuum of ultra-fast traps has been observed with density between 1.94 × 1012 and 6.25 × 1012 cm−2 with time constant of 19.9 ns at 0.18 eV from EC is observed. It is also identified that at high temperature the time constant and trap density for ultra-fast traps has reduced whereas the density of slow traps has a significant increment with similar time constant.
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Authors are thankful to the GaN MMIC team, Solid State Physics Laboratory, DRDO, New Delhi, India for providing the opportunity to carry out this work, and the Indian Institute of Technology, New Delhi, India for their experimental support.
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Chanchal et al. (2022). Investigation of Traps in AlGaN/GaN HEMT Epitaxial Structure Using Conductance Method. In: Shah, A.P., Dasgupta, S., Darji, A., Tudu, J. (eds) VLSI Design and Test. VDAT 2022. Communications in Computer and Information Science, vol 1687. Springer, Cham. https://doi.org/10.1007/978-3-031-21514-8_7
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