Abstract
In this work we present a multi-scale computational framework for evaluation of statistical variability in a molecular based non-volatile memory cell. As a test case we analyse a BULK flash cell with polyoxometalates (POM) inorganic molecules used as storage centres. We focuse our discussions on the methodology and development of our innovative and unique computational framework. The capability of the discussed multi-scale approach is demonstrated by establishing a link between the threshold voltage variability and current-voltage characteristics with various oxidation states of the POMs. The presented simulation framework and methodology can be applied not only to the POM based flash cell but they are also transferrable to the flash cells based on alternative molecules used as a storage media.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Similar content being viewed by others
References
Kim, Y.S., et al.: New scale limitations of the floating gate cells in NAND flash memories. In: IEEE International Reliability Physics Symposium (RPS), pp. 599–603 (2010)
Park, M., et al.: Direct field effect of neighboring cell transistor on cell-to-cell interference of NAND Flash cell arrays. IEEE Electron Device Lett. 30(2), 174–177 (2009)
Amoroso, S.M., et al.: Impact of statistical variability and 3D electrostatics on post-cycling anomalous charge loss in nanoscale flash memories. In: IEEE International Reliability Physics Symposium (RPS) pp. 3.B.4.1–3.B.4.6 (2013)
Lu, C.Y.: Future prospects of NAND flash memory technology the evolution from floating gate to charge trapping to 3D Stacking. J. Nanosci. Nanotechnol. 12(10), 7604–7618 (2012)
Ma, C.H., et al.: Novel random telegraph signal method to study program/erase charge lateral spread and retention loss in a SONOS flash memory. IEEE Trans. Electron Devices (TED) 58(3), 623–630 (2011)
Amoroso, S.M., Maconi, A., Mauri, A., Campagnoli, C.M.: 3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories. IEDM Tech Digest, pp. 22.6.1–22.6.4 (2010)
Compagnoni, C.M., Ielmini, D., Spinelli, A.S., Lacaita, A.L.: Optimization of threshold voltage window under tunneling program/erase in nanocrystal memories. Trans. Electron Devices (TED) 52(11), 2473–2479 (2005)
Shaw, J., Hou, T.H., Raza, H., Kan, E.C.: Statistical metrology of metal nanocrystal memories with 3-D finite-element analysis. Trans. Electron Devices (TED) 56(8), 1729–1736 (2009)
Dimitrakis, P., et al.: Quantum dots for memory applications. Phys. Status Solidi A 210(8), 1490–1504 (2013)
Pro, T., Buckley, J., Huang, K., Calborean, A., Gely, M., Delapierre, G.: Investigation of hybrid molecular/silicon memories with redox-active molecules acting as storage media. IEEE Trans. Nanatechnol. 8(2), 204–213 (2009)
Musumeci, C., Rosnes, M., Giannazzo, F., Symes, M., Cronin, L., Pignataro, B.: Smart high-k nanodielectrics using solid supported polyoxometalate-rich nanostructures. Nano 5(12), 9992–9999 (2011)
Zhu, H., et al.: Non-volatile memories with self-assemble ferrocene charge trapping layer. App. Phys. Lett. 103, 053102 (2013)
Paydavosi, S., et al.: High-density charge storage on molecular thin films - candidate materials for high storage capacity memory cells. IEEE IEDM, vol. 11-543, pp. 24-4-1 (2011)
Fay, N., et al.: Structural, electrochemical, and spectroscopic charac-terization of a redox pair of sulfite-based polyoxotungstates: \(\alpha \)-\([{\rm W}_{18}{\rm O}_{54}({\rm SO}_{3})_{2}]^{4-}\) and \(\alpha [{\rm W}_{18}{\rm O}_{54}({\rm SO}_{3})_{2}]^{5-}\). Inorg. Chem. 46, 3502 (2007)
Shaw, J., et al.: Integration of self-assembled redox molecules in flash memories. IEEE Trans. Electron Devices 58(3), 826 (2011)
Vilá-Nadal, L., et al.: Towards polyoxometalate-cluster-based nano-electronics. Chem. Eur. J. 19(49), 16502–16511 (2013)
Georgiev, V.P., et al.: Optimisation and evaluation of variability in the programming window of a flash cell with molecular metal-oxide storage. IEEE Trans. Electron Devices (2014, in press). doi:10.1109/TED.2014.2315520
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer International Publishing Switzerland
About this paper
Cite this paper
Georgiev, V.P., Asenov, A. (2015). Multi-scale Computational Framework for Evaluating of the Performance of Molecular Based Flash Cells. In: Dimov, I., Fidanova, S., Lirkov, I. (eds) Numerical Methods and Applications. NMA 2014. Lecture Notes in Computer Science(), vol 8962. Springer, Cham. https://doi.org/10.1007/978-3-319-15585-2_22
Download citation
DOI: https://doi.org/10.1007/978-3-319-15585-2_22
Published:
Publisher Name: Springer, Cham
Print ISBN: 978-3-319-15584-5
Online ISBN: 978-3-319-15585-2
eBook Packages: Computer ScienceComputer Science (R0)