Abstract
The electric characteristic of MOS capacitor with HfO2/SiO2/p-Si grown by ALCVD (atom layer chemical vapor deposition) is investigated. The C-V curves show that the accumulation capacitances take on the frequency dispersion at high frequency. For MOS capacitor with ultra thin HfO2/SiO2 gate stack, different fabrication processes and measurement equipment will cause parasitic effect. Here an equivalent circuit model that can eliminate the frequency dispersion effect is proposed. The C-V characteristics curve at high frequency shows some distortion because of the bulk defects and the interface states. This paper discusses the distortion of the high frequency MOS C-V characteristic curve. A data processing method is advanced and interface trap density distribution in the band gap is presented. By comparing the ideal C-V curve with the experimental C-V curve, the typical electrical parameters of MOS capacitor are extracted, including the shift of flat-band voltage, the oxide charges and the density of interface traps at the SiO2/Si interface.
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Liu, H., Kuang, Q., Luan, S. et al. Frequency dispersion effect and parameters extraction method for novel HfO2 as gate dielectric. Sci. China Inf. Sci. 53, 878–884 (2010). https://doi.org/10.1007/s11432-010-0079-8
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DOI: https://doi.org/10.1007/s11432-010-0079-8