Abstract
The integration of multiple functional devices to achieve complex functions has become an essential requirement for future wearable biomedical electronic devices and systems. In this paper, we present a flexible multi-functional device composed of a biocompatible organic polymer resistive random-access memory (RRAM) and a photoresistor for wearable image sensing application. The resistive layer of organic polymer RRAM is composed by polychloro-para-xylylene (parylene-C), which is a flexible, transparent, biocompatibility and chemical stability polymer material. What is more, parylene-C is quite safe to be used within human body as it is a Food and Drug Administration (FDA)-approved material. This organic RRAM shows stable switching characteristics, low operation voltages (3.25 V for set voltage and −0.55 V for reset voltage), low static power consumption, high storage window and good retention properties (>104 s). A multi-functional device that can detect the light intensity of incident light and simultaneously store the information in the memory devices for wearable image sensing application was proposed and fabricated by integrating the organic resistive memory and a photoresistor. The threshold of incident light intensity can be easily adjust by changing the external voltage. This device is promising for building wearable electronic systems with various multiple functionalities.
Similar content being viewed by others
References
Choi S, Lee H, Ghaffari R, et al. Recent advances in flexible and stretchable bio-electronic devices integrated with nanomaterials. Adv Mater, 2016, 28: 4203–4218
Gao W, Emaminejad S, Nyein H Y Y, et al. Fully integrated wearable sensor arrays for multiplexed in situ perspiration analysis. Nature, 2016, 529: 509–514
Pang C, Lee C, Suh K Y. Recent advances in flexible sensors for wearable and implantable devices. J Appl Polym Sci, 2013, 130: 1429–1441
Shao Y Y, Wang J, Wu H, et al. Graphene based electrochemical sensors and biosensors: a review. Electroanalysis, 2010, 22: 1027–1036
Kim S, Jeong H Y, Kim S K, et al. Flexible memristive memory array on plastic substrates. Nano Lett, 2011, 11: 5438–5442
Kim J, Lee M S, Jeon S, et al. Highly transparent and stretchable field-effect transistor sensors using graphene-nanowire hybrid nanostructures. Adv Mater, 2015, 27: 3292–3297
Wang X F, Lu X H, Liu B, et al. Flexible energy-storage devices: design consideration and recent progress. Adv Mater, 2014, 26: 4763–4782
Trung T Q, Lee N E. Flexible and stretchable physical sensor integrated platforms for wearable human-activity monitoringand personal healthcare. Adv Mater, 2016, 28: 4338–4372
Lee H, Choi T K, Lee Y B, et al. A graphene-based electrochemical device with thermoresponsive microneedles for diabetes monitoring and therapy. Nat Nanotech, 2016, 11: 566–572
Son D, Lee J, Qiao S T, et al. Multifunctional wearable devices for diagnosis and therapy of movement disorders. Nat Nano, 2014, 9: 397–404
Pan F, Gao S, Chen C, et al. Recent progress in resistive random access memories: materials, switching mechanisms, and performance. Mater Sci Eng R Rep, 2014, 83: 1–59
Wong H S P, Lee H Y, Yu S M, et al. Metal-oxide RRAM. Proc IEEE, 2012, 100: 1951–1970
Liu Q, Sun J, Lv H B, et al. Real-time observation on dynamic growth/dissolution of conductive filaments in oxideelectrolyte-based ReRAM. Adv Mater, 2012, 24: 1844–1849
Yang Y C, Gao P, Gaba S, et al. Observation of conducting filament growth in nanoscale resistive memories. Nat Commun, 2012, 3: 732
Yu M X, Cai Y M, Wang Z W, et al. Novel vertical 3D structure of TaOx-based RRAM with self-localized switching region by sidewall electrode oxidation. Sci Rep, 2016, 6: 21020
Cheng C H, Yeh F S, Chin A. Low-power high-performance non-volatile memory on a flexible substrate with excellent endurance. Adv Mater, 2011, 23: 902–905
Long S B, Liu Q, Lv H B, et al. Research progresses of resistive random access memory (in Chinese). Sci Sin-Phys Mech Astron, 2016, 46: 107311
Hudec B, Hsu C W, Wang I T, et al. 3D resistive RAM cell design for high-density storage class memory—a review. Sci China Inf Sci, 2016, 59: 061403
Shin G H, Kim C K, Bang G S, et al. Multilevel resistive switching nonvolatile memory based on MoS2 nanosheetembedded graphene oxide. 2D Mater, 2016, 3: 034002
Puglisi F M, Larcher L, Pan C, et al. 2D h-BN based RRAM devices. In: Proceedings IEEE International Electron Devices Meeting (IEDM), San Francisco, 2016
Casula G, Cosseddu P, Bonfiglio A. Integration of an organic resistive memory with a pressure-sensitive element on a fully flexible substrate. Adv Electron Mater, 2015, 1: 1500234
Son D, Chae S I, Kim M, et al. Colloidal synthesis of uniform-sized molybdenum disulfide nanosheets for wafer-scale flexible nonvolatile memory. Adv Mater, 2016, 28: 9326–9332
Choi J, Park S, Lee J, et al. Organolead halide perovskites for low operating voltage multilevel resistive switching. Adv Mater, 2016, 28: 6562–6567
Wang C Y, Gu P Y, Hu B L, et al. Recent progress in organic resistance memory with small molecules and inorganicorganic hybrid polymers as active elements. J Mater Chem C, 2015, 3: 10055–10065
Liu G, Zhuang X D, Chen Y, et al. Bistable electrical switching and electronic memory effect in a solution-processable graphene oxide-donor polymer complex. Appl Phys Lett, 2009, 95: 253301
Nau S, Wolf C, Sax S, et al. Organic non-volatile resistive photo-switches for flexible image detector arrays. Adv Mater, 2015, 27: 1048–1052
Pierre A, Gaikwad A, Arias A C. Charge-integrating organic heterojunction phototransistors for wide-dynamic-range image sensors. Nat Photon, 2017, 11: 193–199
Yakunin S, Sytnyk M, Kriegner D, et al. Detection of X-ray photons by solution-processed lead halide perovskites. Nat Photon, 2015, 9: 444–449
Tian L, Luo X L, Yin M, et al. Enhanced CMOS image sensor by flexible 3D nanocone anti-reflection film. Sci Bull, 2017, 62: 130–135
Zhao Q, Huang C H, Li F Y. Phosphorescent heavy-metal complexes for bioimaging. Chem Soc Rev, 2011, 40: 2508–2524
Fossum E R, Hondongwa D B. A review of the pinned photodiode for CCD and CMOS image sensors. IEEE J Electron Devices Soc, 2014, 2: 33–43
Goossens S, Navickaite G, Monasterio C, et al. Broadband image sensor array based on graphene-CMOS integration. Nat Photon, 2017, 11: 366–371
Theuwissen A J P. CMOS image sensors: state-of-the-art. Solid State Electron, 2008, 52: 1401–1406
Huang W, Xu Z Y. Characteristics and performance of image sensor communication. IEEE Photon J, 2017, 9: 7902919
El-Desouki M, Deen M J, Fang Q Y, et al. CMOS image sensors for high speed applications. Sensors, 2009, 9: 430–444
Shin B, Park S, Shin H. The effect of photodiode shape on charge transfer in CMOS image sensors. Solid-State Electron, 2010, 54: 1416–1420
Zhou Y F, Cao Z X, Han Y, et al. A low power global shutter pixel with extended FD voltage swing range for large format high speed CMOS image sensor. Sci China Inf Sci, 2015, 58: 042406
Xue Y Y, Wang Z J, Liu M B, et al. Research on proton radiation effects on CMOS image sensors with experimental and particle transport simulation methods. Sci China Inf Sci, 2017, 60: 120402
Acknowledgements
This work was supported in part by National Natural Science Foundation of China (Grant Nos. 61574007, 61376087, 61421005), Beijing Municipal Science and Technology Commission Program (Grant No. Z161100000216148), and Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences (Grant No. IIMDKFJJ-14-08).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Chen, Q., Lin, M., Fang, Y. et al. Integration of biocompatible organic resistive memory and photoresistor for wearable image sensing application. Sci. China Inf. Sci. 61, 060411 (2018). https://doi.org/10.1007/s11432-017-9356-4
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1007/s11432-017-9356-4