Abstract
CdMnTe offers several potential advantages over CdZnTe as a room- temperature gamma-ray detector, but many drawbacks in its growth process impede the production of large, defect-free single crystals with high electrical resistivity and high electron lifetimes. Here, we report our findings of the defects in several vanadium-doped as-grown as well as annealed Cd1−x Mn x Te crystals, using etch pit techniques. We carefully selected single crystals from the raw wafer to fabricate and test as a gamma-ray detector. We describe the quality of the processed Cd1−x Mn x Te surfaces, and compare them with similarly treated CdZnTe crystals. We discuss the characterization experiments aimed at clarifying the electrical properties of fabricated detectors, and evaluate their performance as gamma-ray spectrometers.
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This work was supported by the US Department of Energy, Office of Nonproliferation Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the US Department of Energy. The US Government retains, and the publisher, by accepting the article for publication, acknowledges, a worldwide licence to publish or reproduce the published form of this manuscript, or allow others to do so, for US Government purposes.
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Hossain, A., Cui, Y., Bolotnikov, A. et al. Vanadium-Doped Cadmium Manganese Telluride (Cd1−x Mn x Te) Crystals as X- and Gamma-Ray Detectors. J. Electron. Mater. 38, 1593–1599 (2009). https://doi.org/10.1007/s11664-009-0780-9
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DOI: https://doi.org/10.1007/s11664-009-0780-9