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Preparation and characterization of SbAs nanorods for opto-electronics applications

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Abstract

Polycrystalline SbAs nanorods were synthesized by the simple solvothermal method. X-ray diffraction analysis of prepared SbAs confirmed the formation of rhombohedral structure and the average crystallite size of ~9 nm. Nanorods shaped morphology of SbAs polycrystalline was studied using high-resolution scanning electron microscopy analysis. The optical bandgap energy of 3.58 eV was determined from UV–visible spectrum with absorption maximum at 226 nm. An uncommon and fascinating potential-induced semiconductor to insulator-like transition is determined within the frequency-dependent real and imaginary part of impedance, dielectric plot and modulus plot. The direct bandgap of prepared SbAs nanorods made it applicable in opto-electronic devices.

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Authors and Affiliations

  1. Department of Nuclear Physics, University of Madras, Chennai, 600 025, India

    V Asvini, G Saravanan, R K Kalaiezhily & K Ravichandran

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  1. V Asvini
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  2. G Saravanan
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  3. R K Kalaiezhily
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  4. K Ravichandran
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Correspondence to K Ravichandran.

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Asvini, V., Saravanan, G., Kalaiezhily, R.K. et al. Preparation and characterization of SbAs nanorods for opto-electronics applications. Bull Mater Sci 46, 10 (2023). https://doi.org/10.1007/s12034-022-02849-4

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  • DOI: https://doi.org/10.1007/s12034-022-02849-4

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