Abstract
This paper presents a new model for gate-to-channel GOS defects. The transistors used in digital cell library are usually designed with a minimum-size. This new model permits to handle minimal-length transistors allowing the simulation of GOS defects in realistic digital circuits. Based on the electrical analysis of the defect behavior, a comprehensive method for the model construction is detailed. It is shown that the behavior of the proposed model matches in a satisfactory way the behavior of a defective transistor including the random parameters of the defect.
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Renovell, M., Gallière, J., Azaïs, F. et al. Modeling the Random Parameters Effects in a Non-Split Model of Gate Oxide Short. Journal of Electronic Testing 19, 377–386 (2003). https://doi.org/10.1023/A:1024683708105
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DOI: https://doi.org/10.1023/A:1024683708105