Correction: Corrigendum: On-chip light sources for silicon photonics

Correction to: Light: Science & Applications (2015) 4, e358; doi:10.1038/lsa.2015.131; published online 20 November 2015

In the version of this article originally published, the substrate used in reference 111 to grow InAs/GaAs quantum dots was silicon. However, the authors have found out that 500 nm of germanium was first grown on silicon by chemical vapor deposition before growing InAs/GaAs quantum dots. Therefore, the InAs/GaAs quantum dots reported in reference 111 are actually grown on Ge-on-Si substrate. Therefore,

• 1 In Table 2, the substrate of reference 111 should be ‘Ge-on-Si’ instead of ‘Si’.

• 2 In ‘III–V-BASED SI LASER’ section, ‘Another method to suppress TDs is using nano-structures, notably QDs^103-110’ should be ‘Another method to suppress TDs is using nano-structures, notably QDs^103-111’.

• 3 In ‘III–V-BASED SI LASER’ section, ‘Electrically pumped 1.3-μm InAs/GaAs QD lasers monolithically grown on Ge¹⁰⁵, Ge-on-Si¹⁰⁶, and Si^107-111’ should be ‘Electrically pumped 1.3-mm InAs/GaAs QD lasers monolithically grown on Ge¹⁰⁵, Ge-on-Si^106,111, and Si^107-110’.

We apologize for any inconvenience this may have caused.