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The following article is Open access

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

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Published 5 August 2008 Published under licence by IOP Publishing Ltd
, , Focus on Dilute Magnetic Semiconductors Citation A D Giddings et al 2008 New J. Phys. 10 085004 DOI 10.1088/1367-2630/10/8/085004

1367-2630/10/8/085004

Abstract

We report here large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstrictions of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.

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10.1088/1367-2630/10/8/085004