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Magnetotransport as a probe of phase transformations in metallic antiferromagnets: The case of UIrSi3

F. Honda, J. Valenta, J. Prokleška, J. Pospíšil, P. Proschek, J. Prchal, and V. Sechovský
Phys. Rev. B 100, 014401 – Published 1 July 2019
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Abstract

The electrical resistance, Hall resistance, and thermoelectric power of the Ising-like antiferromagnet UIrSi3 were measured as functions of temperature and magnetic field. We have observed that the unequivocally different characters of first-order and second-order magnetic phase transitions lead to distinctly different magnetotransport properties in the neighborhood of corresponding critical temperatures and magnetic fields, respectively. The magnetic contributions to the electrical and Hall resistivity in the antiferromagnetic state, and the polarized and normal regimes of paramagnetic state are driven by different underlying mechanisms. Results of detailed measurements of magnetotransport in the vicinity of the tricritical point reveal that the Hall-resistivity steps at phase transitions change polarity just at this point. The jumps in field dependences of specific heat, electrical resistivity, Hall resistivity, and Seebeck coefficient at the first-order metamagnetic transitions indicate a Fermi surface reconstruction, which is characteristic of a magnetic-field-induced Lifshitz transition. The presented results emphasize the usefulness of measurements of electrical- and thermal-transport properties as sensitive probes of magnetic phase transformations in antiferromagnets sometimes hardly detectable by other methods.

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  • Received 2 December 2018
  • Revised 9 June 2019

DOI:https://doi.org/10.1103/PhysRevB.100.014401

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

F. Honda1, J. Valenta2, J. Prokleška2, J. Pospíšil2, P. Proschek2, J. Prchal2, and V. Sechovský2

  • 1Tohoku University, Institute for Materials Research, Narita-cho 2145-2, Oarai, Ibaraki, Japan
  • 2Charles University, Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Ke Karlovu 5, Prague 2, Czech Republic

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Issue

Vol. 100, Iss. 1 — 1 July 2019

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Images

  • Figure 1
    Figure 1

    Laue pattern of the UIrSi3 single crystal oriented along [110].

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  • Figure 2
    Figure 2

    Temperature dependence of the electrical resistivity of UIrSi3 for electrical current parallel to the [100] and [001] direction, respectively. Inset: a low-temperature detail including also the corresponding specific-heat Cp vs T (green points) plot. The arrows marks TN.

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  • Figure 3
    Figure 3

    Temperature dependences of the electrical resistivity for the current parallel to the [100] and [001] directions (top and bottom panel, respectively) and specific heat (middle panel) of UIrSi3 below 45 K in the magnetic field applied in the [001] direction. The ρ vs T curves measured in different fields are mutually shifted by 20 µΩ cm along the vertical axis for clarity. The actual vertical scale corresponds to the 0-T curve. The colored vertical lines represent the TN values corresponding to the actual applied magnetic fields. The 7-T line corresponds to the bifurcation point of the FC and ZFC resistivity curves.

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  • Figure 4
    Figure 4

    Temperature dependences of the electrical resistivity ρ[001] (upper panel) and magnetization M (lower panel) of UIrSi3 measured in the magnetic field of 5, 6, 7, and 8 T, respectively, applied in the [001] direction. For 7 T the ZFC (line with open symbols) and FC (line with full symbols) M(T) and ρ(T) curves, respectively, bifurcate below TN. The ρ(T) curves measured in different fields are mutually shifted by 15 µΩ cm along the vertical axis for clarity. The displayed vertical scale corresponds to the 5-T curve. Inset of lower panel: detail of the hysteresis of the transition in 6 T. The arrows represent the direction of field sweep.

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  • Figure 5
    Figure 5

    Temperature dependence of Hall resistivity ρH vs T (upper panel) and magnetization M vs T (lower panel) of UIrSi3 in several magnetic fields applied in the [001] direction. The ρH vs T and M vs T plots in corresponding magnetic fields are in the same colors. The colored vertical lines represent the TN values determined by specific-heat measurements. The 7-T vertical line corresponds to the bifurcation point of the ZFC (line with full symbols) and FC (line with open symbols) ρH vs T and M vs T curves, respectively. The 6-T, 7-T, and 8-T plots in the upper panel are vertically shifted by −0.1, −0.4, −0.8 µΩ cm, respectively.

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  • Figure 6
    Figure 6

    The electrical resistivity of UIrSi3 at selected temperatures for current parallel to the [100] direction, left panels (a), (b), (c) and the [001] direction, right panels (d), (e), (f) as a function of the magnetic field applied in the [001] direction. The ρ(H) curves in left (right) panels measured at different temperatures are mutually shifted by 2 µΩ cm (6 µΩ cm) along the vertical axis for clarity. The field scale of panels (c) and (f) is expanded to make the evolution of hysteresis at temperatures up to 20 K more visible. The arrows show the direction of field sweep.

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  • Figure 7
    Figure 7

    The Hall resistivity of UIrSi3 at selected temperatures as a function of the magnetic field applied in the [001] direction. Where needed, the arrows show the direction of field sweeps. The hysteresis of the MT at 20 K is 0.25 T, negligible at 25 K and zero at temperatures ≥28 K.

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  • Figure 8
    Figure 8

    The Seebeck coefficient of UIrSi3 (left panel) at 15, 20, and 33 K as a function of the magnetic field applied in the [001] direction. The arrow shows the direction of field sweep. Right panel: Temperature dependence in zero magnetic field.

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  • Figure 9
    Figure 9

    From top to bottom panel: electrical resistivity for i//[001], electrical resistivity for i//[100], Hall resistivity, magnetization, and the specific heat divided by temperature of UIrSi3 at 2 K as functions of the magnetic field applied in the [001] direction.

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  • Figure 10
    Figure 10

    The magnetic phase diagram of UIrSi3 when the magnetic field is applied along the c axis. PM – normal paramagnet, PPM – polarized paramagnet regime as a result of a FOMPT in fields above Hc, AFM – antiferromagnetic phase. Hc and Hc represented by dark green circles and blue upside-down triangles are defined as inflection points of the field-sweep-up and field-sweep-down M(H), ρ(H), and ρH(H) isotherms, respectively, in the vicinity of the MT. The light green circles represent TN values determined by anomalies on the isofield Cp(T), ρ(T), and ρH(H) curves. The red hexagon represents the tricritical point. The lines are guides for the eye.

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