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Pressure-driven valence increase and metallization in the Kondo insulator Ce3Bi4Pt3

Daniel J. Campbell, Zachary E. Brubaker, Connor Roncaioli, Prathum Saraf, Yuming Xiao, Paul Chow, Curtis Kenney-Benson, Dmitry Popov, Rena J. Zieve, Jason R. Jeffries, and Johnpierre Paglione
Phys. Rev. B 100, 235133 – Published 23 December 2019
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  • INTRODUCTION
  • EXPERIMENTAL DETAILS
  • X-RAY DIFFRACTION
  • CERIUM VALENCE MEASUREMENTS
  • ELECTRICAL TRANSPORT
  • DISCUSSION
  • CONCLUSION
  • ACKNOWLEDGMENTS
    • References

    Abstract

    We report the results of high-pressure x-ray diffraction, x-ray absorption, and electrical transport measurements of the Kondo insulator (KI) Ce3Bi4Pt3 up to 42 GPa, the highest pressure reached in the study of any Ce-based KI. We observe a smooth decrease in volume and movement toward intermediate Ce valence with pressure, both of which point to increased electron correlations. Despite this, temperature-dependent resistance data show the suppression of the interaction-driven ambient pressure insulating ground state. We also discuss potential ramifications of these results for the predicted topological KI state.

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    • Received 21 July 2019
    • Revised 8 October 2019

    DOI:https://doi.org/10.1103/PhysRevB.100.235133

    ©2019 American Physical Society

    Physics Subject Headings (PhySH)

    1. Physical Systems
    Kondo insulatorsStrongly correlated systems
    1. Techniques
    Pressure effectsPressure techniquesX-ray absorption near-edge spectroscopyX-ray diffractionX-ray techniques
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    Daniel J. Campbell1, Zachary E. Brubaker2,3, Connor Roncaioli1, Prathum Saraf1, Yuming Xiao4, Paul Chow4, Curtis Kenney-Benson4, Dmitry Popov4, Rena J. Zieve3, Jason R. Jeffries2, and Johnpierre Paglione1

    • 1Quantum Materials Center, Department of Physics, University of Maryland, College Park, Maryland 20742, USA
    • 2Lawrence Livermore National Laboratory, Livermore, California 94550, USA
    • 3Department of Physics, University of California, Davis, California 95616, USA
    • 4HPCAT, X-ray Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA

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    Issue

    Vol. 100, Iss. 23 — 15 December 2019

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    Images

    • Figure 1
      Figure 1

      (a) The Ce3Bi4Pt3 unit cell, along with the fundamental Ce units (tetrahedrally coordinated to both Bi and Pt) that compose the larger structure. (b) Volume change with pressure of Ce3Bi4Pt3. The red line is a fit to the third-order Birch-Murnaghan equation of state [Eq. (1)]. The 0 GPa volume was determined outside of a DAC. (c) Diffraction patterns (offset) for various pressures taken at room temperature. Cu peaks are marked with pink asterisks.

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    • Figure 2
      Figure 2

      (a) Emitted intensity (offset) vs. incoming photon energy in the region of the Ce L3 edge from XANES measurements for an ambient-pressure sample and high-pressure Sample B, with fits shown as black lines. Data were taken at room temperature on two separate occasions at the APS, hence the difference in scanned energy range for the ambient sample. A constant background has been subtracted and the data sets have been scaled to have the same high energy fluorescent intensity. The pre-edge feature, 4f1 edge, 4f0-related shoulder, and 4f0 edge are labeled. Only the edge heights factor into valence calculation. (b) Calculated Ce valence (with error bars) as a function of pressure for the ambient pressure crystal and the two DAC samples.

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    • Figure 3
      Figure 3

      Resistance, scaled to 300 K, as a function of temperature for Ce3Bi4Pt3 Samples (a) C and (b) D at various pressures. The black circular symbols are data from a different ambient pressure sample. (c) Raw resistance values of Sample D data for select pressures, which all had the same wiring configuration. Symbols and colors correspond to the same pressures as in (b).

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    • Figure 4
      Figure 4

      (a) THump (red) and the scaled resistance increase (blue) as a function of pressure for both DAC samples. Base temperature was 2 K for all measurements except Sample C at 5.2 GPa, where it was 10 K. (b) Semilog plot of the resistance at 2 K and 300 K (downward- and upward-facing triangles, respectively) for Sample D, with all measurements done in the same wiring configuration.

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    • Figure 5
      Figure 5

      Symmetrized transverse magnetoresistance (as a percentage of zero field resistance) of an ambient-pressure crystal and high-pressure Sample D at (a) 300 K and (b) 5 K.

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