Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
  • Rapid Communication

Ambipolar charge sensing of few-charge quantum dots

A. J. Sousa de Almeida, A. Márquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, and F. A. Zwanenburg
Phys. Rev. B 101, 201301(R) – Published 20 May 2020
PDFHTMLExport Citation
Abstract
Authors
Article Text
  • INTRODUCTION
  • EXPERIMENTAL DETAILS
  • RESULTS AND DISCUSSION
  • CONCLUSION
  • ACKNOWLEDGMENTS
    • References

    Abstract

    We demonstrate few-charge occupation of electron and hole quantum dots in silicon via charge sensing. We have fabricated quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other one. We further detect the few-electron and few-hole regimes in the QDs of our device by active charge sensing.

    • Figure
    • Figure
    • Figure
    • Figure
    • Received 13 January 2020
    • Revised 1 May 2020
    • Accepted 5 May 2020

    DOI:https://doi.org/10.1103/PhysRevB.101.201301

    ©2020 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Coulomb blockadeQuantum information with solid state qubitsQuantum sensing
    1. Physical Systems
    Quantum dots
    Quantum Information, Science & TechnologyCondensed Matter, Materials & Applied Physics

    Authors & Affiliations

    A. J. Sousa de Almeida*, A. Márquez Seco, T. van den Berg, B. van de Ven, F. Bruijnes, S. V. Amitonov, and F. A. Zwanenburg

    • NanoElectronics Group, MESA + Institute for Nanotechnology, University of Twente, Enschede, Netherlands

    • *a.j.sousadealmeida@utwente.nl

    Article Text (Subscription Required)

    Click to Expand

    References (Subscription Required)

    Click to Expand
    Issue

    Vol. 101, Iss. 20 — 15 May 2020

    Reuse & Permissions
    Access Options
    Author publication services for translation and copyediting assistance advertisement

    Authorization Required

    Log In
    Other Options
    ×

    Images

    • Figure 1
      Figure 1

      Quantum dot device. (a) Atomic force micrograph of the device, showing the SET (left) and SHT (right) regions. Each region comprises three gate electrodes: two barrier gates which create tunnel barriers to the QD and a lead gate which applies the voltage needed to form a two-dimensional electron (hole) gas at the Si/SiO2 interface. (b) Schematic cross section of the device. Dark gray represents the electron and hole reservoirs.

      Reuse & Permissions
    • Figure 2
      Figure 2

      Ambipolar charge sensing. (a)–(c) Charge sensing using the SHT as a sensor. Source-drain current versus VB2e and VLe through (a) the SET (labeled Ie) and (b) the SHT (labeled Ih). Data acquired at VB1e=1.12 V, VLh=−1.45 V, VB1h=−0.70 V, and VB2h=−0.53 V. (c) Line traces of Ie and Ih at the values of VLe indicated by the arrows in (a) and (b), respectively. (d)–(f) Charge sensing using the SET as a sensor. Source-drain current versus VB1h and VLh through (d) the SET (labeled Ie) and (e) the SHT (labeled Ih). Data acquired at VB2h=−0.55 V, VLe=1.83 V, VB1e=0.98 V, and VB2e=1.16 V. (f) Line traces of Ie and Ih at the values of VLh indicated by the arrows in (d) and (e). The schemes in the top right of each panel represent the alignment of the SHT and SET levels for each charge-sensing regime. SET and SHT source-drain voltages were fixed at 0.5 mV.

      Reuse & Permissions
    • Figure 3
      Figure 3

      Simultaneous ambipolar charge sensing. (a) Source-drain current versus VLe and VLh through the SET (right) and the SHT (left). (b) Close-ups of these charge stability diagrams plotted as the tranconductance gme and gmh of the SET (right) and of the SHT (left). Data acquired at VB1e=1.0 V, VB2e=1.1 V, VB1h=−0.65 V, and VB2h=−0.65 V and with SET and SHT source-drain voltages fixed at 0.5 mV.

      Reuse & Permissions
    • Figure 4
      Figure 4

      Charge sensing of few-charge occupation in the SET and SHT. Charge stability diagrams of the (a) SHT and (b) SET, extracted by plotting the respective mutual capacitance AC calculated by the feedback control system. The numbers between brackets indicate the charge occupation of the few-hole double QD.

      Reuse & Permissions
    ×

    Sign up to receive regular email alerts from Physical Review B

    Log In

    Cancel
    ×

    Search

    Article Lookup

    Paste a citation or DOI
    Enter a citation
    ×