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Electrical and thermal transport properties of the kagome metals ATi3Bi5(A=Rb,Cs)

Xintong Chen, Xiangqi Liu, Wei Xia, Xinrun Mi, Luyao Zhong, Kunya Yang, Long Zhang, Yuhan Gan, Yan Liu, Guiwen Wang, Aifeng Wang, Yisheng Chai, Junying Shen, Xiaolong Yang, Yanfeng Guo, and Mingquan He
Phys. Rev. B 107, 174510 – Published 10 May 2023

Abstract

We report electrical and thermal transport properties of single-crystalline kagome metals ATi3Bi5(A=Rb,Cs). Different from the structrually similar kagome superconductors AV3Sb5, no charge density wave instabilities are found in ATi3Bi5. At low temperatures below 5 K, signatures of superconductivity appear in ATi3Bi5 as seen in magnetization measurements. However, bulk superconductivity is not evidenced by specific heat results. Similar to AV3Sb5, ATi3Bi5 show a nonlinear magnetic field dependence of the Hall effect below about 70 K, pointing to a multiband nature. Unlike AV3Sb5 in which phonons and electron-phonon coupling play important roles in thermal transport, the thermal conductivity in ATi3Bi5 is dominated by electronic contributions. Moreover, our calculated electronic structures of ATi3Bi5 suggest that van Hove singularities are sitting well above the Fermi energy. Compared with AV3Sb5, the absence of charge orders in ATi3Bi5 is closely associated with minor contributions from electron-phonon coupling and/or van Hove singularities.

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  • Received 7 March 2023
  • Revised 25 April 2023
  • Accepted 26 April 2023

DOI:https://doi.org/10.1103/PhysRevB.107.174510

©2023 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Xintong Chen1,*, Xiangqi Liu2,*, Wei Xia2,3, Xinrun Mi1, Luyao Zhong1, Kunya Yang1, Long Zhang1, Yuhan Gan1, Yan Liu4, Guiwen Wang4, Aifeng Wang1, Yisheng Chai1, Junying Shen5,6, Xiaolong Yang1,†, Yanfeng Guo2,3,‡, and Mingquan He1,§

  • 1Low Temperature Physics Laboratory, College of Physics & Center of Quantum Materials and Devices, Chongqing University, Chongqing 401331, China
  • 2School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
  • 3ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, China
  • 4Analytical and Testing Center, Chongqing University, Chongqing 401331, China
  • 5Institute of High Energy Physics, Chinese Academy of Sciences (CAS), Beijing 100049, China
  • 6Spallation Neutron Source Science Center, Dongguan 523803, China

  • *These authors contributed equally to this work.
  • yangxl@cqu.edu.cn
  • guoyf@shanghaitech.edu.cn
  • §mingquan.he@cqu.edu.cn

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Issue

Vol. 107, Iss. 17 — 1 May 2023

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Images

  • Figure 1
    Figure 1

    (a) Side (left panel) and top (right panel) views of the crystal structure of ATi3Bi5 (space group: P6/mmm). The Ti atoms form a kagome lattice in the Ti-Bi layer with one type of Bi atoms (Bi1) sitting in the center of kagome hexagons. The other type of Bi atoms (Bi2) locate above and below the Ti-Bi1 layer, forming a honeycomb pattern. (b) X-ray diffraction patterns of RbTi3Bi5 (black curve) and CsTi3Bi5 (red curve) single crystals. The (00L) peaks can be nicely identified. The inset in (b) shows photographs of typical ATi3Bi5 samples. (c) and (d) Calculated electronic band structures of RbTi3Bi5 and CsTi3Bi5 with (solid lines) and without (dashed lines) considering spin-orbit coupling.

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  • Figure 2
    Figure 2

    (a) and (b) Temperature dependence of magnetization M(T) for CsTi3Bi5 and RbTi3Bi5 samples. Insets in (a) and (b) show low-temperature zero-field-cooling (ZFC) measurements. (c) and (d) Low-temperature specific heat Cp. The solid red lines in (c) and (d) are theoretical fittings in the form of Cp/T=γ+βT2.

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  • Figure 3
    Figure 3

    (a)–(c) Temperature dependence of the longitudinal electrical resistivity (ρxx), Seebeck effect (Sxx), and thermal conductivity (κxx) of CsTi3Bi5 and RbTi3Bi5 crystals. Circular points in (c) represent the total thermal conductivity (κtot). Solid lines in (c) are calculated electronic thermal conductivity (κel) according to the Wiedemann-Franz law. (d) Comparison of phonon thermal conductivity (κph) in CsTi3Bi5, RbTi3Bi5, and CsV3Sb5 [71].

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  • Figure 4
    Figure 4

    (a), (c) and (b), (d) Magnetoresistance (MR) and Hall resistivity (ρyx) of CsTi3Bi5 and RbTi3Bi5 recorded at selective temperatures. Nonlinear ρyx(B) curves appear below 70 K in both materials.

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  • Figure 5
    Figure 5

    (a) and (b) Electrical Hall conductivity (σxy) of CsTi3Bi5 and RbTi3Bi5. Scattered circular points are experimental data. Solid lines are theoretical fittings using a two-band model. Vertical offsets have been applied for clarity. (c)–(f) Temperature dependence of carrier density and mobility of each band obtained from the Hall conductivity.

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