Abstract
The electrical transport properties of underdoped high-temperature superconducting superlattices grown by pulsed laser deposition have been investigated. Starting from the optimally doped superlattice, having three planes and around 80 K, we have systematically increased the number n up to 15 moving toward the underdoped region and hence decreasing For the artificial structures are no longer superconducting, as expected, for a uniformly distributed charge carrier density inside the conducting block layer. The sheet resistance of such artificial structures turns out to be quite temperature independent and close to the two-dimensional quantum resistance 26 kΩ. A further increase of the number of planes results in an insulator-type dependence of in the wide range of temperatures from room temperature to 1 K. The value of the sheet resistance separating the superconducting and the insulating regimes supports the fermionic scenario of the superconductor-insulator transition in these systems.
- Received 5 May 2000
DOI:https://doi.org/10.1103/PhysRevB.62.9835
©2000 American Physical Society