Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures

G. M. Minkov; A. V. Germanenko; O. E. Rut; A. A. Sherstobitov; B. N. Zvonkov; E. A. Uskova; A. A. Birukov

doi:10.1103/PhysRevB.64.193309

Role of doped layers in the dephasing of two-dimensional electrons in quantum-well structures

G. M. Minkov, A. V. Germanenko, O. E. Rut, A. A. Sherstobitov, B. N. Zvonkov, E. A. Uskova, and A. A. Birukov

Phys. Rev. B 64, 193309 – Published 19 October 2001

Abstract

The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with a single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a significant decrease of the phase breaking time of the carriers in the quantum well and to saturation of the phase breaking time at low temperature.

Received 6 June 2001

DOI:https://doi.org/10.1103/PhysRevB.64.193309

Authors & Affiliations

G. M. Minkov^*, A. V. Germanenko, O. E. Rut, and A. A. Sherstobitov

Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia

B. N. Zvonkov, E. A. Uskova, and A. A. Birukov

Physical-Technical Research Institute, University of Nizhni Novgorod, 603600 Nizhni Novgorod, Russia

^*Grigori.Minkov@usu.ru

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Vol. 64, Iss. 19 — 15 November 2001

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covering condensed matter and materials physics