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Nonmonotonic magnetoresistance of two-dimensional electron systems in the ballistic regime

A. Yu. Kuntsevich, G. M. Minkov, A. A. Sherstobitov, and V. M. Pudalov
Phys. Rev. B 79, 205319 – Published 21 May 2009
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    Abstract

    We report experimental observations of a novel magnetoresistance (MR) behavior of two-dimensional electron systems in perpendicular magnetic field in the ballistic regime for kBTτ/ℏ>1. The MR grows with field and exhibits a maximum at fields B>1/μ where μ is the electron mobility. As temperature increases, the magnitude of the maximum grows and its position moves to higher fields. This effect is universal: it is observed in various Si- and GaAs-based two-dimensional electron systems. We compared our data with recent theory based on the Kohn anomaly modification in magnetic field and found qualitative similarities and discrepancies.

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    • Received 17 February 2009

    DOI:https://doi.org/10.1103/PhysRevB.79.205319

    ©2009 American Physical Society

    Authors & Affiliations

    A. Yu. Kuntsevich1, G. M. Minkov2,3, A. A. Sherstobitov2,3, and V. M. Pudalov1

    • 1P. N. Lebedev Physics Institute, 119991 Moscow, Russia
    • 2Institute of Metal Physics, Russian Academy of Sciences, 620219 Ekaterinburg, Russia
    • 3Institute of Physics and Applied Mathematics, Ural State University, 620083 Ekaterinburg, Russia

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    Vol. 79, Iss. 20 — 15 May 2009

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    • Figure 1
      Figure 1
      (Color online) Magnetoresistance for sample Si4 at different temperatures. Electron density n=1.72⋅1012 cm−2. Up arrows mark positions of the ρxx maxima. Δρ designates the magnitude of the MR. Dashed curve on the panel e shows fitting according to Eq. (2) with λ2=0.2. ℏ/kBτ≈8 K.Reuse & Permissions
    • Figure 2
      Figure 2
      (Color online) Magnetoresistance for sample 1520 at different temperatures. Electron density n=1.4⋅1012 cm−2. Temperature values are indicated in the figure. ℏ/kBτ=13.5 K.Reuse & Permissions
    • Figure 3
      Figure 3
      (Color online) Magnetoresistance for sample 28 at different temperatures. Electron density n=0.35⋅1012 cm−2. Temperature values are indicated in the figure. ℏ/kBτ=1 K.Reuse & Permissions
    • Figure 4
      Figure 4
      (a) ωcmaxτ value versus dimensionless temperature kBTτ/ℏ for all samples. Electron densities (in units of 1012 cm−2) are ⋆−n=0.6 (Si13); +−n=0.7 (Si13); ×−n=1 (Si13); ◼−n=1.3 (Si4); ◆−n=1.7 (Si4); ▲−n=2.35 (Si4);•−n=3.4 (Si4); ⊙−n=1.4 (1520); ⊗−n=1 (1520); ⊖−n=1.6 (1520); ⊕−n=0.8 (1520);◇−n=1 (1520); ▽−n=0.35 (28); and △−n=0.4 (24). Dashed line corresponds to ℏωcmax=0.7kBT. Dotted line is ℏωcmax=0.2kBT. Horizontal thick line is the theoretical prediction (see in the text). (b) The same data for GaAs-based samples solely scale in coordinates ωcmaxτ versus kBT/EF.Reuse & Permissions
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