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Cd doping effects in the heavy-fermion compounds Ce2MIn8 (M=Rh and Ir)

C. Adriano, C. Giles, E. M. Bittar, L. N. Coelho, F. de Bergevin, C. Mazzoli, L. Paolasini, W. Ratcliff, R. Bindel, J. W. Lynn, Z. Fisk, and P. G. Pagliuso
Phys. Rev. B 81, 245115 – Published 15 June 2010

Abstract

Low-temperature magnetic properties of Cd-doped Ce2MIn8 (M=Rh and Ir) single crystals are investigated. Experiments of temperature-dependent magnetic-susceptibility, heat-capacity, and electrical-resistivity measurements revealed that Cd doping enhances the antiferromagnetic (AFM) ordering temperature from TN=2.8K (x=0) to TN=4.8K (x=0.21) for Ce2RhIn8xCdx and induces long-range AFM ordering with TN=3.8K (x=0.21) for Ce2IrIn8xCdx. Additionally, x-ray and neutron magnetic scattering studies showed that Cd-doped samples present below TN a commensurate antiferromagnetic structure with a propagation vector ε=(12,12,0). The resolved magnetic structures for both compounds indicate that the Cd doping tends to rotate the direction of the ordered magnetic moments toward the ab plane. This result suggests that the Cd doping affects the Ce3+ ground-state single-ion anisotropy modifying the crystalline electrical field (CEF) parameters at the Ce3+ site. Indications of CEF evolution induced by Cd doping were also found in the electrical-resistivity measurements. Comparisons between our results and the general effects of Cd doping on the related compounds CeMIn5 (M=Co, Rh, and Ir) confirms the claims that the Cd doping induced electronic tuning is the main effect favoring AFM ordering in these compounds.

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  • Received 22 December 2009

DOI:https://doi.org/10.1103/PhysRevB.81.245115

©2010 American Physical Society

Authors & Affiliations

C. Adriano1,*, C. Giles1, E. M. Bittar1, L. N. Coelho1, F. de Bergevin2, C. Mazzoli2, L. Paolasini2, W. Ratcliff3, R. Bindel3, J. W. Lynn3, Z. Fisk4, and P. G. Pagliuso1

  • 1Instituto de Física “Gleb Wataghin,” Universidade Estadual de Campinas (UNICAMP), 13083-970 Campinas, SP, Brazil
  • 2European Synchrotron Radiation Facility, BP 220, F-38043 Grenoble Cedex, France
  • 3NIST Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA
  • 4University of California, Irvine, California 92697-4574, USA

  • *cadriano@ifi.unicamp.br

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Vol. 81, Iss. 24 — 15 June 2010

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Images

  • Figure 1
    Figure 1
    (Color online) Temperature dependence of the magnetic susceptibility in the low-T region for Cd-doped (a) Ce2RhIn8 and (b) Ce2IrIn8 single crystals [pure compounds (circles), x=0.03 (triangles), and x=0.21 (squares)]. The magnetic field H=0.1T was applied parallel χ (closed symbols) and perpendicular χ (open symbols) to the c axis. The insets in both panels show the magnetic susceptibility as a function of the temperature from 2.0 to 300 K for x=0.21 of Cd in both systems. 1emu/(molOe)=4π×106m3/mol.Reuse & Permissions
  • Figure 2
    Figure 2
    (Color online) Magnetic specific-heat data (Cmag=CTClatt) divided by temperature as a function of temperature for (a) Ce2RhIn8xCdx and (b) Ce2IrIn8xCdx single crystals for various Cd concentrations. The insets in each panels show the magnetic entropy Smag for both systems.Reuse & Permissions
  • Figure 3
    Figure 3
    (Color online) TN as a function of Cd concentration for Ce2MIn8xCdx (closed symbols) and CeMIn5xCdx (open symbols) for M=Rh (squares) and Ir (circles). The 115’s results were taken from Ref. 13 for comparison.Reuse & Permissions
  • Figure 4
    Figure 4
    (Color online) Temperature dependence of the electrical resistivity ρ(T) in the low-T region for (a) Ce2RhIn8xCdx and (b) Ce2IrIn8xCdx compounds. The insets in each panels show ρ(T) from 2.0 to 300 K for x=0.21 for both series. The arrows indicate the temperature TMAX where the electrical resistivity has a maximum; (c) TMAX as a function of the Cd concentrationReuse & Permissions
  • Figure 5
    Figure 5
    (Color online) (a) Temperature dependence of the ordered magnetic moment, proportional to square root of the integrated intensity, of the (12,12,9) magnetic reflection measured with transverse θ scans in the temperature range between T=2.0 and 5.2 K for Ce2RhIn7.79Cd0.21. The inset shows two θ scans of the same reflection for different temperatures: 4.6 K (open triangles) and 2.0 K (closed squares). The continuous line is a Voigt fit to the observed data at T=2.0K. (b) Energy line shape of the (12,12,9) magnetic peak at T=2.0K for πσ polarization channel at the CeL2 absorption edge. The line is just a guide to the eyes.Reuse & Permissions
  • Figure 6
    Figure 6
    (Color online) The l dependence (in reciprocal-lattice units) of the normalized intensities of the magnetic peaks (12,12,l) measured at the energy of the CeL2 edge at T=2.0K in the σπ polarization channel for Ce2RhIn7.79Cd0.21. The solid line represents the best fit using the model discussed in Eqs. (1, 2, 3) for η=47° and ψ=45°. The other lines represent the model calculated for ψ=45° and η=0° (dashed line) and η=90° (dashed-dotted line).Reuse & Permissions
  • Figure 7
    Figure 7
    (Color online) Temperature dependence of the integrated intensities of the (12,12,1) magnetic reflection measured during heating the sample in the temperature range between T=2.0K and T=4.5K for Ce2IrIn7.79Cd0.21 for 35 meV. The inset shows the θ scan of the same reflection for T=2.0K for Ce2IrIn7.79Cd0.21 where the continuous line is a Voigt fit to the observed data.Reuse & Permissions
  • Figure 8
    Figure 8
    (Color online) The l dependence (in reciprocal-lattice units) of the σ(Q) of the magnetic peaks (12,12,l) measured at the energy of 35 meV at T=2K. The solid line represents the best fit using the model discussed in Eqs. (4, 5, 6) for η=21° and S=0.4(5)μB. The other lines represent the model calculated for η=0° (dashed line) and η=90° (dashed-dotted line).Reuse & Permissions
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