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Coulomb oscillations of indium-doped ZnO nanowire transistors in a magnetic field

Xiulai Xu, Andrew C. Irvine, Yang Yang, Xitian Zhang, and David A. Williams
Phys. Rev. B 82, 195309 – Published 5 November 2010
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  • INTRODUCTION
  • EXPERIMENTAL DETAILS
  • RESULTS AND DISCUSSION
  • CONCLUSIONS
  • ACKNOWLEDGEMENTS
    • References

    Abstract

    We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase in oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wave function modification in the quantum dots.

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    • Received 25 June 2010

    DOI:https://doi.org/10.1103/PhysRevB.82.195309

    ©2010 American Physical Society

    Authors & Affiliations

    Xiulai Xu1,*, Andrew C. Irvine2, Yang Yang3, Xitian Zhang4,†, and David A. Williams1

    • 1Hitachi Cambridge Laboratory, Hitachi Europe Ltd., JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
    • 2Microelectronics Research Centre, Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, United Kingdom
    • 3Department of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
    • 4Heilongjiang Key Laboratory for Advanced Functional Materials and Excited State Processes, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, People’s Republic of China

    • *xx757@cam.ac.uk
    • †xtzhangzhang@hotmail.com

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    Issue

    Vol. 82, Iss. 19 — 15 November 2010

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    Images

    • Figure 1
      Figure 1
      (Color online) Conductivity of a typical nanowire as a function of reciprocal temperature. Inset: a SEM image of a nanowire transistor. The white scale bar is 2 μm. The electrode width of 2 μm was used to improve the ohmic contact.Reuse & Permissions
    • Figure 2
      Figure 2
      (Color online) (a) A typical I−V curve of a transistor with different back gate voltages. (b) Source-drain current as a function of gate voltage at different source-drain voltages.Reuse & Permissions
    • Figure 3
      Figure 3
      (Color online) (a) and (b) are differential transconductance as a function of gate voltage at 1.5 K and 10 K, respectively. (c) Contour plot of the differential transconductance for a multitunneling junction device. The dashed dark gray lines are highlighting the Coulomb diamonds. (d) Coulomb diamonds of a transistor when a single island dominates the Coulomb oscillations.Reuse & Permissions
    • Figure 4
      Figure 4
      (Color online) (a) Magnetoresistance as a function of B2 in configurations of B∥I and B⊥I. (b) and (c) Coulomb peak height as a function of magnetic field in B⊥I (solid squares)and B∥I configurations (solid triangles). The peaks are shown in the insets with a Vsd at −20 mV.Reuse & Permissions
    • Figure 5
      Figure 5
      (Color online) Contour plot of the differential transconductance for the device in Fig. 3c at 1.5 K with B=10 T. The dashed dark gray lines are used to guide the eyes.Reuse & Permissions
    • Figure 6
      Figure 6
      (Color online) Contour plots of differential transconductance as a function of both magnetic field and gate bias for (a) B⊥I and (b) B∥I. The peaks are labeled in (a).Reuse & Permissions
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