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Hidden-order pseudogap in URu2Si2

J. T. Haraldsen, Y. Dubi, N. J. Curro, and A. V. Balatsky
Phys. Rev. B 84, 214410 – Published 5 December 2011
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  • INTRODUCTION
  • THEORETICAL SIMULATION OF THE PSEUDOGAP
  • CONCLUSION
  • ACKNOWLEDGEMENTS
    • References

    Abstract

    Through an analysis and modeling of data from various experimental techniques, we present clear evidence for the presence of a hidden-order pseudogap in URu2Si2 in the temperature range 25–17.5 K. Considering fluctuations of the hidden-order energy gap at the transition, we evaluate the effects that gap fluctuations would produce on observables like tunneling conductance, neutron scattering, and nuclear resonance, and relate them to the experimental findings. We show that the transition into the hidden-order phase is likely second order and is preceded by the onset of noncoherent hidden-order fluctuations.

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    • Received 10 July 2011

    DOI:https://doi.org/10.1103/PhysRevB.84.214410

    ©2011 American Physical Society

    Authors & Affiliations

    J. T. Haraldsen1,2, Y. Dubi3, N. J. Curro4, and A. V. Balatsky1,2

    • 1Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
    • 2Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
    • 3School of Physics and Astronomy, Tel Aviv University, Tel Aviv 69978, Israel
    • 4Department of Physics, University of California, Davis, California 95616, USA

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    Vol. 84, Iss. 21 — 1 December 2011

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    Images

    • Figure 1
      Figure 1
      The temperature versus pressure phase diagram for URu2Si2 using data from Ref. 8 showing the paramagnetic (PM), hidden-order (HO), superconducting (SC), and large moment antiferromagnetic (LMAF) phases. The shaded region denotes the proposed hidden-order pseudogap (HOPG) region. The inset shows the susceptibility of URu2Si2 as a function of temperature [observed by Maple et al. (Ref. 7)], illustrating the existence of a pseudogap region. In the absence of a PG, the slopes of the susceptibility (solid black lines) would exhibit an abrupt change. The discrepancies between the slopes (dashed red line) reveals the PG region (shaded area) between 17.5 and 25 K.Reuse & Permissions
    • Figure 2
      Figure 2
      (a) Simulated dI/dV versus ω for t= T/THO= 0.4–1.6. Here, the pseudogap is shown for t= 1.0 (dashed black) due to fluctuations within the energy gap. If no fluctuations occur, then the t= 1.0 curve will be flat (dotted black). The suppression of the density of states at THO demonstrates the presence of a pseudogap state. Here, σ is given by a= 3.0 meV and b= 0.2. (b) Normalized dI/dV versus potential for URu2Si2 from Ref. 3. We used normalization, where we divide the low-temperature dI/dV(V,T) data by high-temperature data dI/dV(V,T=25K). We note that our simple model does provide a reasonable comparison with the data, while we are not pursuing full fit of the data at this point.Reuse & Permissions
    • Figure 3
      Figure 3
      Spin susceptibility as a function of energy and momentum. (a) and (b) show the gapless system (t⩾1.0) without and with gap fluctuations, respectively. (c) and (d) show the gapped system (t= 0.5) without and with fluctuations, respectively. The clear broadening of the spin excitations denotes a precursory PG to the HO phase.Reuse & Permissions
    • Figure 4
      Figure 4
      The temperature dependence of the NMR relaxation time for gap fluctuations with and without a temperature-dependent distribution calculated from integrating Eq. (6) over the fluctuations of Δ. The increased presence of gap fluctuations increases the relaxation time and softens the gap suppression. The addition of a temperature-dependent σ (b= 0.2) produces a sloped response for t> 1.0 (dash-dotted gray line).Reuse & Permissions
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