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High-resolution characterization of microstructural evolution in RbxFe2ySe2 crystals on annealing

S. C. Speller, P. Dudin, S. Fitzgerald, G. M. Hughes, K. Kruska, T. B. Britton, A. Krzton-Maziopa, E. Pomjakushina, K. Conder, A. Barinov, and C. R. M. Grovenor
Phys. Rev. B 90, 024520 – Published 30 July 2014
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Abstract

The superconducting and magnetic properties of phase-separated AxFe2ySe2 compounds are known to depend on postgrowth heat treatments and cooling profiles. This paper focuses on the evolution of microstructure on annealing and how this influences the superconducting properties of RbxFe2ySe2 single crystals. We find that the minority phase in the as-grown crystal has increased unit cell anisotropy (c/a ratio), reduced Rb content, and increased Fe content compared to the main phase. The microstructure is rather complex, with two-phase mesoscopic plate-shaped features aligned along {113} habit planes. The minority phases are strongly faceted on the {113} planes, which we have shown to be driven by minimizing the volume strain energy introduced as a result of the phase transformation. Annealing at 488 K results in coarsening of the mesoscopic plate-shaped features and the formation of a third distinct phase. The subtle differences in structure and chemistry of the minority phase(s) in the crystals are thought to be responsible for changes in the superconducting transition temperature. In addition, scanning photoemission microscopy has clearly shown that the electronic structure of the minority phase has a higher occupied density of states of the low binding energy Fe3d orbitals, which is characteristic of crystals that exhibit superconductivity. This demonstrates a clear correlation between the Fe-vacancy-free phase with high c/a ratio and the electronic structure characteristics of the superconducting phase.

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  • Received 4 June 2014
  • Revised 27 June 2014

DOI:https://doi.org/10.1103/PhysRevB.90.024520

©2014 American Physical Society

Authors & Affiliations

S. C. Speller1,*, P. Dudin2, S. Fitzgerald1, G. M. Hughes1, K. Kruska1, T. B. Britton3, A. Krzton-Maziopa4, E. Pomjakushina5, K. Conder5, A. Barinov6, and C. R. M. Grovenor1

  • 1Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
  • 2Diamond Light Source, Harwell Science and Innovation Campus, Didcot OX11 0DE, United Kingdom
  • 3Department of Materials, Imperial College, London SW7 2AZ, United Kingdom
  • 4Warsaw University of Technology, Faculty of Chemistry, Noakowskiego St.3, 00-664 Warsaw, Poland
  • 5Laboratory for Developments and Methods, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland
  • 6Elettra-Sincrotrone Trieste ScPA, 34149 Basovizza, Trieste, Italy

  • *Corresponding author: susannah.speller@materials.ox.ac.uk

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Issue

Vol. 90, Iss. 2 — 1 July 2014

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Images

  • Figure 1
    Figure 1

    HR-EBSD maps from (a) as-grown, (b) 488 K annealed, and (c) 563 K annealed crystals showing spatial variations in the c/a ratio. HR-EBSD maps for (d) AG and (e) A488 thresholded on MAE > 0.009 and MAE > 0.007, respectively. (f) Probability distribution of c/a ratio for each map, with the white pixels (poor-quality data) removed.

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  • Figure 2
    Figure 2

    Three-dimensional reconstruction of the minority phase in the as-grown crystal produced by serial FIB sectioning. The yellow phase near the surface of the crystal is oxide which is present as the surface and was not freshly cleaved for the cross-sectional analysis. The reconstructed volume is 10×7.5×0.8μm in size.

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  • Figure 3
    Figure 3

    20 kV backscattered electron images showing compositional variations in AG (left panel) and A488 samples (right panel).

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  • Figure 4
    Figure 4

    BSE images with corresponding EDX maps taken at 5 kV for three different regions of the A488 sample.

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  • Figure 5
    Figure 5

    Scanning photoemission microscopy data for samples (a)–(c) AG-2 and (d)–(f) A488-2: (a), (d) near-Fermi-level maps, (b), (e) survey spectra, and (c), (f) detailed spectra near the Fermi level.

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  • Figure 6
    Figure 6

    Left: Calculated energy surface as a function of facet normal n. Center: Projection onto the (11¯0) plane (arb. units). Right: SEM micrograph showing the faceting in the (11¯0) plane.

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