Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                

Tuning of the electronic and optical properties of single-layer black phosphorus by strain

Deniz Çakır, Hasan Sahin, and François M. Peeters
Phys. Rev. B 90, 205421 – Published 17 November 2014

Abstract

Using first principles calculations we showed that the electronic and optical properties of single-layer black phosphorus (BP) depend strongly on the applied strain. Due to the strong anisotropic atomic structure of BP, its electronic conductivity and optical response are sensitive to the magnitude and the orientation of the applied strain. We found that the inclusion of many body effects is essential for the correct description of the electronic properties of monolayer BP; for example, while the electronic gap of strainless BP is found to be 0.90 eV by using semilocal functionals, it becomes 2.31 eV when many-body effects are taken into account within the G0W0 scheme. Applied tensile strain was shown to significantly enhance electron transport along zigzag direction of BP. Furthermore, biaxial strain is able to tune the optical band gap of monolayer BP from 0.38 eV (at 8% strain) to 2.07 eV (at 5.5%). The exciton binding energy is also sensitive to the magnitude of the applied strain. It is found to be 0.40 eV for compressive biaxial strain of 8%, and it becomes 0.83 eV for tensile strain of 4%. Our calculations demonstrate that the optical response of BP can be significantly tuned using strain engineering which appears as a promising way to design novel photovoltaic devices that capture a broad range of solar spectrum.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 26 September 2014
  • Revised 4 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.205421

©2014 American Physical Society

Authors & Affiliations

Deniz Çakır*, Hasan Sahin, and François M. Peeters

  • Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020 Antwerpen, Belgium

  • *deniz.cakir@uantwerpen.be
  • hasan.sahin@uantwerpen.be
  • francois.peeters@uantwerpen.be

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 90, Iss. 20 — 15 November 2014

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×

Images

  • Figure 1
    Figure 1

    Top and side views of black phosphorus (BP) monolayer. The unit cell of BP is shown by the blue rectangle.

    Reuse & Permissions
  • Figure 2
    Figure 2

    Band structure and conductance for single-layer BP for different strain values. A, B, and C mark the top of the valence band, bottom of the conduction band, and the second lowest conduction band at the Γ point, respectively. Shaded regions depict the upper part of the valence and lower part of the conduction bands. Here the quantum of conductance is G0=2e2h.

    Reuse & Permissions
  • Figure 3
    Figure 3

    3D band decomposed charge densities of band edges which are labeled as A, B, and C in Fig. 2 for strainless BP.

    Reuse & Permissions
  • Figure 4
    Figure 4

    Contour plots of the valence (top) and the conduction (bottom) bands around the Γ point for different strain values calculated with GGA-PBE functional.

    Reuse & Permissions
  • Figure 5
    Figure 5

    Electronic band gap (Egap), optical gap (Eopt), and exciton binding energy (Eexc) as a function of biaxial strain for different exchange-correlation functionals.

    Reuse & Permissions
  • Figure 6
    Figure 6

    G0W0+BSE absorption spectra for monolayer BP as a function of strain. Blue vertical dashed lines mark the electronic band gap calculated at the level of G0W0. Green vertical lines represent the relative oscillator strengths for the optical transitions.

    Reuse & Permissions
×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×