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Magnetoresistance in multilayer fullerene spin valves: A first-principles study

Deniz Çakır, Diana M. Otálvaro, and Geert Brocks
Phys. Rev. B 90, 245404 – Published 2 December 2014

Abstract

Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin lifetimes. We calculate the electronic transport from first principles through spin valves comprising bi- and tri-layers of the fullerene molecules C60 and C70, sandwiched between two Fe electrodes. The spin polarization of the current, and the magnetoresistance depend sensitively on the interactions at the interfaces between the molecules and the metal surfaces. They are much less affected by the thickness of the molecular layers. A high current polarization (CP>90%) and magnetoresistance (MR>100%) at small bias can be attained using C70 layers. In contrast, the current polarization and the magnetoresistance at small bias are vanishingly small for C60 layers. Exploiting a generalized Jullière model we can trace the differences in spin-dependent transport between C60 and C70 layers to differences between the molecule-metal interface states. These states also allow one to interpret the current polarization and the magnetoresistance as a function of the applied bias voltage.

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  • Received 23 October 2014
  • Revised 20 November 2014

DOI:https://doi.org/10.1103/PhysRevB.90.245404

©2014 American Physical Society

Authors & Affiliations

Deniz Çakır1,*, Diana M. Otálvaro2,†, and Geert Brocks2,‡

  • 1Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  • 2Computational Materials Science, Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

  • *deniz.cakir@uantwerpen.be
  • d.otalvaro@utwente.nl
  • g.h.l.a.brocks@utwente.nl

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Issue

Vol. 90, Iss. 24 — 15 December 2014

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Images

  • Figure 1
    Figure 1

    (a) and (b) Side views of the bilayer and trilayer C60 junctions, Fe|(C60)n|Fe, n=2,3; (c) top view of interlayer C60 stacking. The black lines denote the supercell used.

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  • Figure 2
    Figure 2

    Transmissions TP(E) of majority (top) and TP(E) (bottom) of minority spin channels of Fe|(C70)2|Fe at zero bias. The Fermi level is at zero energy. Curves are given for 3×3, 6×6, and 8×8 k-point grid samplings.

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  • Figure 3
    Figure 3

    (a) TP(E) for majority spin (blue) and TP(E) for minority spin (red) at zero bias for Fe|C60C60|Fe junction; (b) projected density of states (PDOS) of the Fe|C60 interface.

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  • Figure 4
    Figure 4

    (a) Calculated transmission spectra TPσ(E) of majority (blue) and minority (red) spins of bilayer C60 (solid lines) and trilayer C60 (dashed lines) junctions. The Fermi level EF is at zero energy. (b) Calculated transmission spectra of C70 junctions.

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  • Figure 5
    Figure 5

    Calculated transmission spectra TAPσ(E) (blue) of bilayer (solid lines) and trilayer (dashed lines) molecular junctions of (a) C60 and (b) C70 [63]. The Fermi level EF is at zero energy. The green dotted lines give the factorization approximation 2TPσ(E)TPσ(E) [see Eq. (9)].

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  • Figure 6
    Figure 6

    (a) Magnetoresistance MR=(IPIAP)/IAP of the C60 bilayer junction as function of bias V. (b) Total currents IP (black) and IAP (red) for the magnetizations of both electrodes parallel, respectively, antiparallel. (c) Current polarization CP=(II)/(I+I).

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  • Figure 7
    Figure 7

    TP(E,V) for majority spin (blue) and TP(E,V) for minority spin (red) of the C60 bilayer junction as a function of bias, from top to bottom: V=0.0, 0.2, 0.4, 0.6, 0.8 V. The vertical lines enclose the energy interval over which to integrate to obtain the total current according to Eq. (1).

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  • Figure 8
    Figure 8

    TAP(E,V) for majority spin (blue) and TAP(E,V) for minority spin (red) of the C60 bilayer junction as a function of bias, from top to bottom: V=0.0, 0.2, 0.4, 0.6, 0.8 V. The vertical lines enclose the energy interval over which to integrate to obtain the total current according to Eq. (1).

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  • Figure 9
    Figure 9

    (a) Density of states of bulk bcc Fe, calculated with PAW (black) and NCPP (red). The NCPP gives an exchange splitting that is 0.2 eV larger, which results in a 0.05 μB larger magnetic moment. (b) Magnetic moments (in μB/atom) of the Fe(001) surface as function of layer position (1 indicates the surface layer) calculated with PAW (black) and NCPP (red).

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  • Figure 10
    Figure 10

    (a) Top and side views of the most stable adsorption geometry of C60 on Fe(001); Fe–C distances below 2.5 Å are indicated specifically. C70 on Fe(001) in structure (I) (b) and structure (II) (c).

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  • Figure 11
    Figure 11

    (a) Projected density of states PDOS n of majority (blue) and n of minority (red) spin states of the Fe(001)|C60 interface, summed over all carbon atoms. Gaussian smearing with a smearing parameter of 0.05 eV is applied. The black lines give the energy levels of the isolated C60 molecule. (b) Magnetization density of states MDOS Δn=nn; (c) and (d) PDOS and MDOS of Fe(001)|C70 in structure (I), and (e) and (f) in structure (II).

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  • Figure 12
    Figure 12

    (a) and (b) Spin polarization of the LDOS at the Fe(001)|C70 interface in structure I, respectively, structure II, integrated over an energy interval [EF0.01,EF+0.01] eV.

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