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  • Rapid Communication

MoTe2: An uncompensated semimetal with extremely large magnetoresistance

S. Thirupathaiah, Rajveer Jha, Banabir Pal, J. S. Matias, P. Kumar Das, P. K. Sivakumar, I. Vobornik, N. C. Plumb, M. Shi, R. A. Ribeiro, and D. D. Sarma
Phys. Rev. B 95, 241105(R) – Published 8 June 2017
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Abstract

Transition-metal dichalcogenides (WTe2 and MoTe2) have recently drawn much attention, because of the nonsaturating extremely large magnetoresistance (XMR) observed in these compounds in addition to the predictions of likely type-II Weyl semimetals. Contrary to the topological insulators or Dirac semimetals where XMR is linearly dependent on the field, in WTe2 and MoTe2 the XMR is nonlinearly dependent on the field, suggesting an entirely different mechanism. Electron-hole compensation has been proposed as a mechanism of this nonsaturating XMR in WTe2, while it is yet to be clear in the case of MoTe2 which has an identical crystal structure of WTe2 at low temperatures. In this Rapid Communication, we report low-energy electronic structure and Fermi surface topology of MoTe2 using angle-resolved photoemission spectrometry (ARPES) technique and first-principles calculations, and compare them with that of WTe2 to understand the mechanism of XMR. Our measurements demonstrate that MoTe2 is an uncompensated semimetal, contrary to WTe2 in which compensated electron-hole pockets have been identified, ruling out the applicability of charge compensation theory for the nonsaturating XMR in MoTe2. In this context, we also discuss the applicability of other existing conjectures on the XMR of these compounds.

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  • Received 2 February 2017

DOI:https://doi.org/10.1103/PhysRevB.95.241105

©2017 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

S. Thirupathaiah1,*, Rajveer Jha2, Banabir Pal1, J. S. Matias2, P. Kumar Das3,4, P. K. Sivakumar1, I. Vobornik3, N. C. Plumb5, M. Shi5, R. A. Ribeiro2, and D. D. Sarma1

  • 1Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, Karnataka 560012, India
  • 2CCNH, Universidade Federal do ABC (UFABC), Santo Andre, SP 09210-580 Brazil
  • 3CNR-IOM, TASC Laboratory AREA Science Park-Basovizza, 34149 Trieste, Italy
  • 4International Centre for Theoretical Physics, Strada Costiera 11, 34100 Trieste, Italy
  • 5Paul Scherrer Institut, Swiss Light Source, CH-5232 Villigen PSI, Switzerland

  • *t.setti@sscu.iisc.ernet.in

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Issue

Vol. 95, Iss. 24 — 15 June 2017

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Images

  • Figure 1
    Figure 1

    (a) Calculated band structure of MoTe2 without (left panel) and with spin-orbit coupling (right panel). (b) Three-dimensional view of the calculated Fermi surfaces with spin-orbit coupling. See Ref. [31] for details on the first-principles calculations.

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  • Figure 2
    Figure 2

    ARPES data of MoTe2 measured on sample A. All the data are measured using p-polarized light with a photon energy of hν=20eV. Note here that the 20 eV photon energy extracts the bands from the kz=0 plane [24, 25]. The data shown in (a)–(c) are measured at a sample temperature of 20 K. (a) depicts the Fermi surface (FS) map. Solid curves represent bulk Fermi sheets, while the dashed curve represents Fermi arc from the surface. (b) shows energy the EDM taken along cut No. 1 as shown on the FS map. Top panels in (c) show EDMs taken along cuts No. 2 through No. 8 from left to right, respectively. Bottom panels in (c) are respective second derivatives of the EDMs shown in the top panels. (d)–(f) depict similar data of (a)–(c) except that these are measured at 130 K. On the FS maps the hole (yellow) and electron pockets (red) contributed from bulk are schematically shown by solid contours and the green dashed contours show the contribution from surface.

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  • Figure 3
    Figure 3

    ARPES data of MoTe2 measured on sample B. All the data are measured with a photon energy of 45 eV. Top panels in (a) depict FS maps measured at sample temperatures of 20, 60, and 130 K. Bottom panels in (a) depict constant energy contours taken at binding energies EB=30, 60, and 120 meV at 20 K. In top panels of (b) we show EDMs taken along cuts No. 1 through No. 3 as shown on the FS map. Bottom panels of (b) are the second derivatives of respective EDMs shown in the top panels. (c) depicts similar data of (b) but measured with s-polarized light, while the data shown in (a) and (b) are measured with p-polarized light. Please see Fig. S2 given in the Supplemental Material for the definition of p- and s-polarized lights.

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