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Phonon-induced linewidths of graphene electronic states

Bo Hellsing, Thomas Frederiksen, Federico Mazzola, Thiagarajan Balasubramanian, and Justin W. Wells
Phys. Rev. B 98, 205428 – Published 29 November 2018
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  • INTRODUCTION
  • EPC-INDUCED LINEWIDTH
  • LINEWIDTH—CALCULATIONS AND EXPERIMENT
  • SUMMARY AND CONCLUSIONS
  • ACKNOWLEDGMENTS
    • References

    Abstract

    The linewidths of the π and σ bands originating from the electron-phonon coupling in graphene are analyzed based on model calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. We find evidence for crucial contributions to the lifetime broadening from interband scattering π→σ and σ→π, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated σ band linewidths are in agreement with recent published ARPES data [Mazzola et al., Phys. Rev. B 95, 075430 (2017)] and of the π band linewidth with ARPES data presented here.

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    • Received 27 August 2018

    DOI:https://doi.org/10.1103/PhysRevB.98.205428

    ©2018 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Acoustic phononsElectronic structureLifetimes & widthsOptical phononsvan Hove singularity
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    Bo Hellsing1,2, Thomas Frederiksen1,3, Federico Mazzola4, Thiagarajan Balasubramanian5, and Justin W. Wells6

    • 1Donostia International Physics Center (DIPC) – UPV/EHU, E-20018 San Sebastián, Spain
    • 2Material and Surface Theory Group, Department of Physics, University of Gothenburg, Sweden
    • 3IKERBASQUE, Basque Foundation for Science, E-48013, Bilbao, Spain
    • 4Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway
    • 5MAX-lab, PO Box 118, S-22100 Lund, Sweden
    • 6Center for Quantum Spintronics, Department of Physics, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway

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    Issue

    Vol. 98, Iss. 20 — 15 November 2018

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    Images

    • Figure 1
      Figure 1

      Occupied part of the electron band structure. The σ bands in red and the π band in blue.

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    • Figure 2
      Figure 2

      Phonon band structure of unsupported graphene (dashed lines) and graphene supported on a rigid substrate (solid lines). Red indicates out-of-plane modes and blue indicates in-plane (transverse and longitudinal) modes.

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    • Figure 3
      Figure 3

      Calculated linewidth of the sigma bands σo and σi versus the binding energy of the σ band maximum at the Γ¯ point, Eσ. The black solid line represents the full linewidth and the contributions from different assisting phonon modes are shown. Results are shown for the two high symmetry directions Γ¯→K¯ and Γ¯→M¯. The inset shows the color notation for the contribution to the linewidth from the different phonon modes.

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    • Figure 4
      Figure 4

      Calculated and measured linewidth of the π band of graphene supported by SiC. (a) Calculated linewidth in the K¯−Γ¯ direction and (b) in the M¯−Γ¯ direction. Calculations are shown for four different vibrational energy cutoffs; 50 meV (green), 100 meV (blue), 150 meV (blue), and 200 meV (black). The dashed line is the total contribution for the unsupported graphene. (c) and (d) ARPES measurements and corresponding linewidth values. (c) ARPES data (gold-black shading) for the π band of monolayer graphene on SiC acquired along the Γ¯−K¯ direction of the Brillouin zone, together with the extracted linewidth (blue curve) and spectra. To help the data visualization a baseline has been overlaid to the data. (d) ARPES data along the M¯−Γ¯ direction (gold-black shading) and the extracted linewidth. In all pictures, the yellow, purple, and blue areas represent the energy ranges where the intra- and interband transitions manifest. The experimentally determined values of the σ band maximum and VH singularity as indicated. Green shading indicates the contributions to the linewidth given by the replica bands [18].

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