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Dual quantum confinement and anisotropic spin splitting in the multivalley semimetal PtSe2

O. J. Clark, F. Mazzola, J. Feng, V. Sunko, I. Marković, L. Bawden, T. K. Kim, P. D. C. King, and M. S. Bahramy
Phys. Rev. B 99, 045438 – Published 25 January 2019
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Abstract

We investigate the electronic structure of a two-dimensional electron gas created at the surface of the multivalley semimetal 1TPtSe2. Using angle-resolved photoemission and first-principles-based surface space-charge calculations, we show how the induced quantum well sub-band states form multiple Fermi surfaces, which exhibit highly anisotropic Rashba-like spin splittings. We further show how the presence of both electronlike and holelike bulk carriers causes the near-surface band bending potential to develop an unusual nonmonotonic form, with spatially segregated electron accumulation and hole accumulation regions, which in turn amplifies the induced spin splitting. Our results thus demonstrate the novel environment that semimetals provide for tailoring electrostatically induced potential profiles and their corresponding quantum sub-band states.

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  • Received 19 October 2018
  • Revised 2 January 2019

DOI:https://doi.org/10.1103/PhysRevB.99.045438

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

O. J. Clark1, F. Mazzola1, J. Feng1,2, V. Sunko1,3, I. Marković1,3, L. Bawden1, T. K. Kim4, P. D. C. King1,*, and M. S. Bahramy5,6,†

  • 1SUPA, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom
  • 2Suzhou Institute of Nano-Tech. and Nanobionics (SINANO), CAS, 398 Ruoshui Road, SEID, SIP, Suzhou, 215123, China
  • 3Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Straße 40, 01187 Dresden, Germany
  • 4Diamond Light Source, Harwell Campus, Didcot, OX11 0DE, United Kingdom
  • 5Quantum-Phase Electronics Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
  • 6RIKEN center for Emergent Matter Science (CEMS), Wako 351-0198, Japan

  • *philip.king@st-andrews.ac.uk
  • bahramy@ap.t.u-tokyo.ac.jp

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Issue

Vol. 99, Iss. 4 — 15 January 2019

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Images

  • Figure 1
    Figure 1

    (a) Three-dimensional Fermi surface of bulk PtSe2, extracted from DFT calculations. Additional kxky contours are displayed for kz=±0.6πc as extracted from photon energy-dependent ARPES, left (hν=120 eV and 99 eV, EF±30 meV) and from DFT, right. (b) ARPES dispersions along the M¯K¯Γ¯M¯ path (hν=53 eV). (c) Equivalent dispersions extracted from DFT calculations, projected as a function of kz between 0 and 0.7πc (see color bar), which are in good agreement with the experimental measurements. No additional states are present in this energy range for other kz values.

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  • Figure 2
    Figure 2

    (a) Schematic representation of near-surface charge accumulation when Rb atoms are deposited on a surface. (b) Measured Fermi surface of Rb-dosed PtSe2 (EF±12 meV, hν=37 eV). (c) Equivalent Fermi surface resulting from a self-consistent band bending calculation.

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  • Figure 3
    Figure 3

    (a) Pristine (left) and Rb-dosed (right) ARPES dispersions (hν=37 eV) measured along the Γ¯M¯ direction. (b) Orbitally projected surface slab calculations over an equivalent range as for (a). The inset shows the spin polarization of the confined Rashba-split pair along Γ¯M¯, projected onto the perpendicular (i.e., chiral) spin component. (c) Bulk orbitally projected band structure of pristine PtSe2 calculated along the in-plane Γ¯M¯ direction for kz=0.6πc. The dashed lines show schematically the expected band structure in the absence of hybridisation between the px,y and pz orbitals.

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  • Figure 4
    Figure 4

    Calculated (a) potential profile and (b) charge density profile for surface-doped PtSe2 with a surface sheet carrier density Nss1×1014 cm2. In (b), ρh and ρe denote the individual contribution of the hole and electron bands to the charge density, respectively. (c), (d) Schematic illustration of quantum confinement of surface states in a compensated semimetal, considering (c) a conventional band bending potential and (d) a real potential satisfying the Poisson's equation for such a double-carrier system.

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  • Figure 5
    Figure 5

    (a) Comparison of calculated charge density profile resulting from all Fermi pockets of PtSe2 vs a hypothetical case where only the electron (K-) pocket and hole (Γ-) pockets are included in the space-charge calculations. (b) The corresponding potential profile for each case. For all three cases, the total sheet carrier density is fixed at 1014 cm2.

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  • Figure 6
    Figure 6

    Expected potential profile of surface-doped PtSe2 at sheet carrier densities (a) 1×1014 cm2, (b) 2.2×1014 cm2, and (c) 4.3×1014 cm2. (d)–(f) The respective spin-resolved surface electronic structures along the Γ¯M¯ direction. Here, spin projection direction is set to be normal to both the momentum direction and the gradient of the bending potential. The size of the spin splitting grows with increasing magnitude of the near-surface potential gradient, indicating that the asymmetric band bending potential is the dominant driver of the Rashba-like spin splitting here.

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