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Anomalous electron transport in epitaxial NdNiO3 films

Shashank Kumar Ojha, Sujay Ray, Tanmoy Das, S. Middey, Sagar Sarkar, Priya Mahadevan, Zhen Wang, Yimei Zhu, Xiaoran Liu, M. Kareev, and J. Chakhalian
Phys. Rev. B 99, 235153 – Published 27 June 2019
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Abstract

The origin of simultaneous electronic, structural, and magnetic transitions in bulk rare-earth nickelates (RENiO3) remains puzzling with multiple conflicting reports on the nature of these entangled phase transitions. Heterostructure engineering of these materials offers unique opportunity to decouple the metal-insulator transition (MIT) from the magnetic transition. However, the evolution of underlying electronic properties across these decoupled transitions remains largely unexplored. In order to address this, we have measured Hall effect on a series of epitaxial NdNiO3 films, spanning a variety of electronic and magnetic phases. We find that the MIT results in only a partially gapped Fermi surface, whereas the full insulating phase forms below the magnetic transition. In addition, we also find a systematic reduction of the Hall coefficient RH in the metallic phase of these films with epitaxial strain and also a surprising transition to a negative value at large compressive strain. The partially gapped, weakly insulating, paramagnetic phase is reminiscence of pseudogap behavior of high-Tc cuprates. The precursor metallic phase, which undergoes transition to the insulating phase, is a non-Fermi liquid with a temperature exponent n of resistivity of 1, whereas the exponent increases to 4/3 in the noninsulating samples. Such a nickelate phase diagram with sign reversal of RH, a pseudogap phase, and non-Fermi-liquid behavior is intriguingly similar to high-Tc cuprates, giving important guidelines to engineer unconventional superconductivity in oxide heterostructures.

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  • Received 8 April 2019
  • Revised 10 June 2019

DOI:https://doi.org/10.1103/PhysRevB.99.235153

©2019 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shashank Kumar Ojha, Sujay Ray, Tanmoy Das, and S. Middey*

  • Department of Physics, Indian Institute of Science, Bengaluru 560012, India

Sagar Sarkar and Priya Mahadevan

  • S.N. Bose National Center for Basic Sciences, JD-Block, Sector III, Salt Lake, Kolkata 700098, India

Zhen Wang and Yimei Zhu

  • Department of Condensed Matter Physics and Materials Science, Brookhaven National Laboratory, Upton, New York 11973, USA

Xiaoran Liu, M. Kareev, and J. Chakhalian

  • Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA

  • *smiddey@iisc.ac.in

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Vol. 99, Iss. 23 — 15 June 2019

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Images

  • Figure 1
    Figure 1

    (a) NdNiO3 thin film on a single-crystalline substrate. (b) Pseudocubic in-plane lattice constant for the substrates used in this work and the corresponding epitaxial strain for NNO. (c) HAADF-STEM image (with false color) of a 20-u.c. NdNiO3 film on a NdGaO3 substrate.

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  • Figure 2
    Figure 2

    (a)–(c) Temperature dependence of the dc resistivity of a 15-u.c. NNO film under tensile strain (top panel) and the variation of RH (bottom panel). The right axis of the bottom panel of (a) and (b) corresponds to a d(lnρxx)/d(1/T) vs T plot.

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  • Figure 3
    Figure 3

    (a) Temperature dependence of the dc resistivity for 15-u.c. NNO films under compressive strain. (b) Temperature dependence of RH in the paramagnetic metallic phase of the NNO films. (c) Relation of RH (top panel) and carrier density (bottom panel) with strain at 300 K. (d) cotθH for the NNO film on a STO substrate as a function of T2. The dotted line represents the T2 dependence.

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  • Figure 4
    Figure 4

    (a) and (b) Computed FS topology for the two representative samples of NNO/STO and NNO/YAO. a in the x and y axes of these graphs corresponds to the in-plane pseudocubic lattice constant of the substrate. For the z axis, c2cp.c., where cp.c. is the out-of-plane lattice constant of the NNO film. Details of the Brillouin zone are discussed in the Supplemental Material [51]. (c) FS volumes for electron (triangle) and hole (circles) pockets compared for all samples without (top panel) and with (middle panel) self-energy corrections. The bottom panel compares the difference between the hole and electron pocket volumes for calculations without (solid diamonds) and with (open squares) self-energy effects. (d) Comparison of the difference between the two FS volumes with the experimental value of the effective carrier density obtained from the Hall effect.

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