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Semiconductor-Nanowire-Based Superconducting Qubit

T. W. Larsen, K. D. Petersson, F. Kuemmeth, T. S. Jespersen, P. Krogstrup, J. Nygård, and C. M. Marcus
Phys. Rev. Lett. 115, 127001 – Published 14 September 2015
Physics logo See Viewpoint: Wiring Up Superconducting Qubits
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Abstract

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device (“gatemon”) is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (0.8μs) and dephasing times (1μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

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  • Received 28 March 2015

DOI:https://doi.org/10.1103/PhysRevLett.115.127001

© 2015 American Physical Society

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Wiring Up Superconducting Qubits

Published 14 September 2015

A qubit made of a semiconducting nanowire sandwiched between two superconductors could simplify the design of quantum information processing architectures.

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Authors & Affiliations

T. W. Larsen1, K. D. Petersson1, F. Kuemmeth1, T. S. Jespersen1, P. Krogstrup1, J. Nygård1,2, and C. M. Marcus1

  • 1Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100, Denmark
  • 2Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Copenhagen 2100, Denmark

See Also

Realization of Microwave Quantum Circuits Using Hybrid Superconducting-Semiconducting Nanowire Josephson Elements

G. de Lange, B. van Heck, A. Bruno, D. J. van Woerkom, A. Geresdi, S. R. Plissard, E. P. A. M. Bakkers, A. R. Akhmerov, and L. DiCarlo
Phys. Rev. Lett. 115, 127002 (2015)

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Vol. 115, Iss. 12 — 18 September 2015

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  • Figure 1
    Figure 1

    InAs nanowire-based superconducting transmon qubit. (a) Scanning electron micrograph of the InAs-Al JJ. A segment of the epitaxial Al shell is etched to create a semiconducting weak link. Inset shows a transmission electron micrograph of the epitaxial InAs/Al interface. (b)–(c) Optical micrographs of the completed gatemon device. The nanowire JJ is shunted by the capacitance of the T-shaped island to the surrounding ground plane. The center pin of the coupled transmission line cavity is indicated in (c). (d) Schematic of the readout and control circuit.

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  • Figure 2
    Figure 2

    Strong coupling of the gatemon to the microwave cavity. (a) Cavity transmission as a function of the cavity drive frequency and VG. The solid blue line shows the bare cavity resonance frequency fC, while the solid green line indicates the gate-voltage dependent qubit frequency fQ(VG) extracted from the data. (b) Cavity transmission as a function of the cavity drive at the position indicated by the purple arrows in (a). (c) Frequency splitting between the hybridized qubit-cavity states, δ, as a function of fQ, as extracted from (a). From fitting the solid theory curve we extract the qubit-cavity coupling strength, g/2π=99MHz. (d) Parametric plot of the data from (a) as a function of the cavity drive and qubit frequency fQ.

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  • Figure 3
    Figure 3

    Gatemon spectroscopy and coherent control. (a) The qubit resonance frequency as a function of gate voltage VG is observed as a distinct feature. (b) Coherent Rabi oscillations are performed at point b in (a) (VG=3.4V) by applying microwave pulse for time τ to drive the qubit followed by a readout microwave pulse to probe the cavity response. The main panel shows coherent qubit oscillations as a function of driving frequency and τ. The lower panel shows coherent oscillations at the qubit resonant frequency, corresponding to rotations about the X axis of the Bloch sphere. (c) Coherent oscillations about the Z axis of the Bloch sphere are performed at point c in (a) (VG=3.27V) by applying a gate voltage pulse ΔVG to detune the qubit resonance frequency for time τ. A 15 ns RXπ/2 microwave pulse is first applied to rotate the qubit into the XY plane of the Bloch sphere and, following the gate pulse, a second RXπ/2 microwave pulse is used to rotate the qubit out of the XY plane for readout. The main panel shows coherent Z rotations as a function of ΔVG and τ. The main panel inset shows the simulated qubit evolution based on ΔfQ(VG) extracted from (a). The lower panel shows coherent Z oscillations as a function of τ for ΔVG=20.9mV. In both (b) and (c) the demodulated cavity response VH is converted to a normalized qubit state probability p|1 by fitting X rotations to a damped sinusoid of the form VH0+ΔVHexp(τ/TRabi)sin(ωτ+θ) to give p|1=(VHVH0)/2ΔVH+1/2. The solid curves in the lower panels of (b) and (c) are also fits to exponentially damped sine functions.

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  • Figure 4
    Figure 4

    Gatemon quantum coherence. (a) Left panel shows a lifetime measurement for sample 1 at point b in Fig. 3 (VG=3.4V). A 30 ns RXπ pulse excites the qubit to the |1 state and we vary the wait time τ before readout. The solid line is a fit to an exponential curve. The right panel shows a Ramsey experiment used to determine T2* for sample 1 with the wait time, τ, between two slightly detuned 15 ns RXπ/2 pulses varied before readout. The solid curve is a fit to an exponentially damped sinusoid. (b) We repeat the lifetime and Ramsey experiments as in (a) for sample 2 with fQ=4.426GHz (VG=11.3V). In red, we perform a Hahn echo experiment by inserting an RXπ pulse between two RXπ/2 pulses. The decay envelope is measured by varying the phase ϕ of the second π/2 microwave pulse and extracting the amplitude of the oscillations. The solid red line is a fit to an exponential curve.

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