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Shot Noise of a Temperature-Biased Tunnel Junction

Samuel Larocque, Edouard Pinsolle, Christian Lupien, and Bertrand Reulet
Phys. Rev. Lett. 125, 106801 – Published 2 September 2020
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  • ACKNOWLEDGMENTS
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    Abstract

    We report the measurement of the current noise of a tunnel junction driven out of equilibrium by a temperature and/or voltage difference, i.e., the charge noise of heat and/or electrical current. This is achieved by a careful control of electron temperature below 1 K at the nanoscale, and a sensitive measurement of noise with wide bandwidth, from 0.1 to 1 GHz. An excellent agreement between experiment and theory with no fitting parameter is obtained. In particular, we find that the current noise of the junction of resistance R when one electrode is at temperature T and the other one at zero temperature is given by S=2 ln2kBT/R.

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    • Received 2 March 2020
    • Accepted 5 August 2020

    DOI:https://doi.org/10.1103/PhysRevLett.125.106801

    © 2020 American Physical Society

    Physics Subject Headings (PhySH)

    1. Research Areas
    Electrical conductivityHeat transferMesoscopicsQuantum transport
    1. Physical Systems
    Tunnel junctions
    1. Techniques
    Transport techniques
    Condensed Matter, Materials & Applied Physics

    Authors & Affiliations

    Samuel Larocque, Edouard Pinsolle, Christian Lupien, and Bertrand Reulet

    • Université de Sherbrooke, Institut Quantique, Département de Physique, Sherbrooke, Québec J1K 2R1, Canada

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    Issue

    Vol. 125, Iss. 10 — 4 September 2020

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    Images

    • Figure 1
      Figure 1

      (a) Experimental setup used to calibrate the noise generated by the wire as a function of applied dc current. A cryogenic switch allows us to measure either the wire (between contacts 1 and 3) or a reference tunnel junction. Contact 2 of the sample is left unconnected. (b) Experimental setup for the measurement of the tunnel junction under voltage and temperature bias. Contacts 1 and 3 are voltage biased independently while the noise generated by the junction is measured. (c) Photograph of the sample. The wire is between the Nb contacts 1 and 3; the junction is between the wire and the Al contact 2.

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    • Figure 2
      Figure 2

      Noise temperature of the wire (right part) and of the reference tunnel junction (left part) as a function of applied dc current. Symbols of different colors correspond to experimental data taken at different phonon temperatures. Dashed lines correspond to theoretical predictions of Eq. (2) for the junction and Eq. (6) for the wire.

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    • Figure 3
      Figure 3

      Noise temperature of the tunnel junction as a function of voltage bias Vj on the junction and heating current Iw in the wire for a phonon temperature Tph=200  mK. The top figure corresponds to experimental data and the bottom one to numerical evaluations of Eq. (1).

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    • Figure 4
      Figure 4

      Noise temperature of the junction as a function of the temperature of the hot electrode. Symbols are experimental data taken at various phonon temperatures. The blue line represents the limit THot=TCold where the junction is at equilibrium. The red line represents the theory for TCold=0. Black dotted lines are numerical calculations for phonon temperatures from 300 to 800 mK. They obey TNoise=TCold+ΔT/2 with ΔT=THot−TCold for small heating, i.e., Eq. (3).

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