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Fabry-Pérot Oscillations in Correlated Carbon Nanotubes

W. Yang, C. Urgell, S. L. De Bonis, M. Margańska, M. Grifoni, and A. Bachtold
Phys. Rev. Lett. 125, 187701 – Published 27 October 2020
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Abstract

We report the observation of an intriguing behavior in the transport properties of nanodevices operating in a regime between the Fabry-Pérot and the Kondo limits. Using ultrahigh quality nanotube devices, we study how the conductance oscillates when sweeping the gate voltage. Surprisingly, we observe a fourfold enhancement of the oscillation period upon decreasing temperature, signaling a crossover from single-electron tunneling to Fabry-Pérot interference. These results suggest that the Fabry-Pérot interference occurs in a regime where electrons are correlated. The link between the measured correlated Fabry-Pérot oscillations and the SU(4) Kondo effect is discussed.

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  • Received 17 March 2020
  • Accepted 24 September 2020

DOI:https://doi.org/10.1103/PhysRevLett.125.187701

© 2020 American Physical Society

Physics Subject Headings (PhySH)

  1. Physical Systems
Condensed Matter, Materials & Applied Physics

Authors & Affiliations

W. Yang1,2, C. Urgell1, S. L. De Bonis1, M. Margańska3, M. Grifoni3, and A. Bachtold1

  • 1ICFO—Institut De Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860 Castelldefels (Barcelona), Spain
  • 2Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China
  • 3Institut für Theoretische Physik, Universität Regensburg, D-93040 Regensburg, Germany

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Issue

Vol. 125, Iss. 18 — 30 October 2020

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Images

  • Figure 1
    Figure 1

    Schematics of the device and low-temperature transport characteristics. (a) The three-terminal device with a suspended CNT contacted to source (S), drain (D), and gate (G) electrodes. (b) Gate voltage dependence of the conductance at zero-source-drain voltage of device I at T=15mK. An oscillating voltage with amplitude smaller than kBT/e is applied to measure the differential conductance.

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  • Figure 2
    Figure 2

    Temperature-induced crossover from an interference-dominated to a charging-controlled regime in device I. (a),(b) Oscillations of the conductance Gdiff versus gate voltage Vg in the hole- and electron-doped regimes. (c) Evolution of the oscillation period for a series of different temperatures. The range of Vg shown in this figure is highlighted in panel (a) by a dashed rectangle. (d) Temperature dependence of the conductance associated with a peak and a dip, as indicated by arrows in (c). (e) Fast Fourier transform (FFT) of the Gdiff(Vg) traces at 15 mK and 8 K measured for Vg between -1.0 V and -0.3 V. (f) Temperature dependence of the FFT amplitude associated with the 4e/Cg period oscillations and the e/Cg period oscillations.

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  • Figure 3
    Figure 3

    Measurements on device II. (a) Conductance traces for a series of different temperatures. (b) Temperature dependence of the FFT amplitude associated with the 4e/Cg and the e/Cg period oscillations. (c) Conductance traces for different perpendicular magnetic fields at 15 mK. (d) Peak splitting as a function of magnetic field for the conductance peaks at different gate voltages.

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  • Figure 4
    Figure 4

    From Fabry-Pérot patterns to blurred Coulomb diamonds in device I. (a) Map of the differential conductance as a function of Vsd and Vg at 15 mK. From the position of the arrow, the single-particle excitation energy is extracted. (b) Differential conductance traces for a series of different source-drain voltages at 15 mK. (c) Source-drain voltage dependence of the FFT amplitude associated with the 4e/Cg and the e/Cg period oscillations at 15 mK. The curves are obtained by doing a FFT of the Gdiff(Vg) trace for each Vsd value. (d) A map of the differential conductance as a function of Vsd and Vg at 8 K. The dashed lines highlight the contours of the Coulomb diamonds.

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