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Dark defect charge dynamics in bulk chemical-vapor-deposition-grown diamonds probed via nitrogen vacancy centers

A. Lozovoi, D. Daw, H. Jayakumar, and C. A. Meriles
Phys. Rev. Materials 4, 053602 – Published 12 May 2020

Abstract

Although chemical vapor deposition (CVD) is one of the preferred routes to synthetic diamond crystals, a full knowledge of the point defects produced during growth is still incomplete. Here we exploit the charge and spin properties of nitrogen vacancy (NV) centers in type-1b CVD diamond to expose an optically and magnetically dark point defect, so far virtually unnoticed despite an abundance comparable to (if not greater than) that of substitutional nitrogen. Indirectly detected photoluminescence spectroscopy indicates a donor state 1.6 eV above the valence band, although the defect's microscopic structure and composition remain elusive. Our results may prove relevant to the growing set of applications that rely on CVD-grown single-crystal diamond.

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  • Received 15 January 2020
  • Revised 5 April 2020
  • Accepted 14 April 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.053602

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

A. Lozovoi1, D. Daw1,2, H. Jayakumar1, and C. A. Meriles1,2,*

  • 1Department of Physics, CUNY, The City College of New York, New York, New York 10031, USA
  • 2CUNY Graduate Center, New York, NY 10016, USA

  • *cmeriles@ccny.cuny.edu

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Vol. 4, Iss. 5 — May 2020

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Images

  • Figure 1
    Figure 1

    (a) DEER pulse sequence adapted to include a variable delay time τdel between the MW1 and MW2 inversion pulses. (b) Measured DEER signal as a function of the MW2 frequency for τ=57μs and τdel=0μs; the solid line is a calculated spectrum using the known N14 hyperfine coupling constants at the N0 site. (c) Ground-state energy diagram of the NV and N0 centers (left and right respectively) in a magnetic field of 17 mT aligned with the NV symmetry axis; mS (mS) denotes the NV (N0) electron spin projection number and mI is the N14 spin projection number at the N0 site. (d) DEER signal at 490 MHz as a function of the MW2 pulse duration; all other conditions as in (b). The solid trace is a damped sinusoidal and serves as a guide to the eye. (e) DEER signal (at the mI=0 transition) as a function of τdel for τ=110μs; the solid line indicates an exponential fit with a time constant τdip=44±5μs corresponding to an N0 concentration nN0=0.25±0.03 ppm. (f) NV coexist with N0 and a dark defect, referred to as X, at least as abundant as nitrogen; see below.

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  • Figure 2
    Figure 2

    (a) Adapted DEER sequence for monitoring the N charge state. (b) Normalized DEER contrast as a function of the wait time τw. The amplitudes are recorded at the mI=0 transition; all other conditions as in Fig. 2. (c) Schematic energy level diagram. The X acceptor level can be populated either by electron tunneling from neighboring N0 or by optical injection of a valence electron.

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  • Figure 3
    Figure 3

    (a) Schematics of NV photochromism under optical (460637nm) excitation. Steps (1) and (2) describe NV photoionization into NV0; steps (3) and (4) correspond to recombination of NV0 into NV. CB (VB) stands for conduction (valence) band. (b) NV0 and NV selective confocal scans (respectively, left and right) upon application of the upper pulse protocol. Zigzags (solid rectangles) indicate a beam scan (park); green (red) color indicates laser excitation at 532 nm (632 nm). We use green (red) laser light for NV0 (NV) readout. (c) Same as in (b) but for a red laser park (0.6 mW). In (b) and (c) the park time is 1 min and the scans correspond to 100×100 pixels and a 10-ms dwell time over a 32×32μm2 area. (d) NV photoluminescence as a function of the green laser pulse duration at a point within the NV-depleted halo; the laser power is 500 µW. (e) Same as in (d) but at the NV-depleted site created via the protocol in (c).

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  • Figure 4
    Figure 4

    (a) We use a protocol identical to that of Fig. 1 but park an IR beam of variable wavelength. Top (bottom) panels show the NV (NV0) fluorescence after a 5-s, 20-mW laser park; all other conditions as in Fig. 1. (b) Proposed mechanism of the NV bleaching involving the promotion of the electron from the valence band into defect X and capture of the created hole by NV. (c) Integrated NV photoluminescence in a 2.8 × 2.8 μm around the point of illumination as a function of the illumination wavelength. Dashed lines are guides to the eye. (d) Decay rate of the NV fluorescence under 710-nm illumination as a function of the illumination power; the red line is a linear fit. (e) Fourier-transformed infrared absorbance spectrum.

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