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Metallic interfaces in a CaTiO3/LaTiO3 superlattice

Shaozhu Xiao, Fangdi Wen, Xiaoran Liu, M. Kareev, Ruyi Zhang, Yang Song, Yujuan Pei, Jiachang Bi, Shaolong He, Jiangbo Lu, Yanwei Cao, and J. Chakhalian
Phys. Rev. Materials 4, 104008 – Published 22 October 2020

Abstract

Apart from a handful of exceptions, all known complex oxide two-dimensional electron gases (2DEGs) are formed in SrTiO3-based heterostructures, and microscopic information about non-SrTiO3 2DEGs systems is scarce. Here, we report on the realization of metallic conductance in a CaTiO3-based system, CaTiO3/LaTiO3 superlattices, epitaxially grown in a layer-by-layer way on a NdGaO3(110) substrate by pulsed laser deposition. The high quality of the crystal and electronic structures is characterized by in situ reflection high-energy electron diffraction, x-ray diffraction, scanning transmission electron microscopy, and x-ray photoemission spectroscopy. Electrical transport confirms the formation of metallic interfaces in the CaTiO3/LaTiO3 superlattice. In addition, Hall measurements reveal that in the CaTiO3/LaTiO3 superlattice the room-temperature carrier mobility is nearly three times higher than that of the CaTiO3/YTiO3 superlattice, implying the importance of TiO6 octahedral tilts and rotations on the carrier mobility of a 2DEG. Since doped CaTiO3 is an A-site polar metal, our results provide a materials system for designing synthetic two-dimensional polar metals.

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  • Received 6 July 2020
  • Accepted 7 October 2020

DOI:https://doi.org/10.1103/PhysRevMaterials.4.104008

©2020 American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Shaozhu Xiao1, Fangdi Wen2, Xiaoran Liu2, M. Kareev2, Ruyi Zhang1, Yang Song1, Yujuan Pei1, Jiachang Bi1, Shaolong He1, Jiangbo Lu3, Yanwei Cao1,4,*, and J. Chakhalian2

  • 1Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 2Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, USA
  • 3School of Physics and Information Technology, Shaanxi Normal University, Xi'an 710119, China
  • 4Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

  • *ywcao@nimte.ac.cn

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Vol. 4, Iss. 10 — October 2020

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Images

  • Figure 1
    Figure 1

    Schematic of (a) CTO/LTO and (b) CTO/YTO interfaces. The yellow lines mark the Ti-O-Ti bond angle α, which is close to 156, 157, and 144 for CTO, LTO, and YTO, respectively. (c) Phase diagram of RTiO3 (R is a rare-earth element) adapted from Refs. [21, 22]. As seen, with decreasing Ti-O-Ti bond angle from La to Tm, the magnetic ground state changes from antiferromagnetic (AFM) to ferromagnetic (FM).

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  • Figure 2
    Figure 2

    (a) Schematic of a CTO/LTO superlattice on NGO(110) substrates. (b)–(d) RHEED patterns of the NGO substrate, CTO layer, and LTO layer during growth, respectively. The white arrows indicate half-order peaks, characteristic of orthorhombic symmetry of the superlattice and substrate.

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  • Figure 3
    Figure 3

    (a) Wide-range 2θω scan of the CTO/LTO superlattice. (b) Fine scan near the (002) reflection. The triangle indicates the (002) peak of the CTO/LTO superlattice.

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  • Figure 4
    Figure 4

    (a) Low-magnification HAADF-STEM image of the CTO/LTO superlattice on a NdGaO3 substrate. (b) Atomic resolution HAADF-STEM image near the interface between the superlattice and substrate.

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  • Figure 5
    Figure 5

    XPS spectra of CTO/LTO superlattices. The spectrum was obtained along the direction normal to the sample surface. (a) Spectrum from 0 to 600 eV binding energy. (b) Ti 2p core level spectrum taken at room temperature. The Shirley background (Bg) function was applied in the fitting (Fit.). The gray dots indicate the experimental (Exp.) data.

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  • Figure 6
    Figure 6

    Temperature-dependent sheet resistances of (a) 20LTO film and (b) CTO/LTO superlattice. (c) Temperature-dependent carrier density per interface in the CTO/LTO superlattice. (d) Carrier mobility of the CTO/LTO superlattice as a function of temperature.

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