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  • Rapid Communication
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Observation of symmetry-protected zero modes in topolectrical circuits

Huanhuan Yang, Z.-X. Li, Yuanyuan Liu, Yunshan Cao, and Peng Yan
Phys. Rev. Research 2, 022028(R) – Published 5 May 2020
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Abstract

Higher-order topological insulators are a new class of topological phases of matter, originally conceived for electrons in solids. It has been suggested that the ZN Berry phase (Berry phase quantized into 2π/N) is a useful tool to characterize the symmetry-protected topological states, whereas the experimental evidence is still elusive. Recently, topolectrical circuits have emerged as a simple yet very powerful platform for studying topological physics that are challenging to realize in condensed-matter systems. Here, we present an experimental observation of second-order corner states characterized by the Z3 Berry phase in topolectrical circuits. We demonstrate theoretically and experimentally that the localized second-order topological states are protected by a generalized chiral symmetry of tripartite lattices, and they are pinned to “zero energy.” By introducing extra capacitors within sublattices in the circuit, we are able to examine the robustness of the zero modes against both chiral-symmetry-conserving and breaking disturbances. Our Rapid Communication paves the way for testing exotic topological band theory by electrical-circuit experiments.

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  • Received 10 January 2020
  • Accepted 17 April 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.022028

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

Huanhuan Yang, Z.-X. Li, Yuanyuan Liu, Yunshan Cao, and Peng Yan*

  • State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China

  • *Corresponding author: yan@uestc.edu.cn

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Vol. 2, Iss. 2 — May - July 2020

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Images

  • Figure 1
    Figure 1

    (a) Illustration of an extended breathing kagome electrical circuit, consisting of two types of capacitors (CA,CB). The black dots are nodes grounded through an inductor (L). (b) The first Brillouin zone. (c)–(e) Band structure for different capacitance ratios: (c) CA/CB=0.22, (d) CA/CB=1, and (e) CA/CB=1.5. (f) Z3 Berry phase and Chern number as a function of CA/CB.

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  • Figure 2
    Figure 2

    (a) Schematic plot of a finite-size circuit with the gray dots being grounded directly. (b) The admittance spectrum at the resonant condition under different ratios CA/CB with the red segment denoting the corner-state phase. (c) Admittances for CA/CB=0.22 [dashed black line in (b)]. The gray, blue, and red dots represent the bulk, edge, and corner states, respectively. (d) Spatial distribution of the bulk, edge, corner, and bulk modes (from left to right and top to bottom) with jn=0.9858,0.3367,1.659×104,0.3147Ω1, respectively.

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  • Figure 3
    Figure 3

    (a) Photograph of the layout of the experiment. (b) Theoretical spectrum of the circuit Laplacian J(ω) versus the driving frequency. Theoretical impedance in (c) pristine and (d) disordered circuits. (e) Experimental results.

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  • Figure 4
    Figure 4

    (a) Locally connecting three capacitors CN=10nF within sublattices A in the top corner. The inset shows the experiment setup. Introducing capacitors within (b) sublattices B and (c) sublattices A in the bulk. (d)–(f) Experimental results for configurations considered in (a)–(c), respectively. The dashed curve is the measurement without CN.

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  • Figure 5
    Figure 5

    (a) Illustration of a rhombus breathing kagome circuit. (b) The admittance spectrum under the resonant condition. The red line segment represents the emergence of zero modes in the top-left corner. (c) Admittances at CA/CB=0.68 [dashed black line in (b)]. (d) The spatial distribution of the bulk, edge, corner, and bulk modes, viewed from left to right and top to bottom, respectively. Experimental measurements of the impedances with (e) and without (f) the generalized chiral symmetry. The insets show the experimental setup.

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