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  • Open Access

Probing two-level systems with electron spin inversion recovery of defects at the Si/SiO2 interface

M. Belli, M. Fanciulli, and R. de Sousa
Phys. Rev. Research 2, 033507 – Published 28 September 2020

Abstract

The main feature of amorphous materials is the presence of excess vibrational modes at low energies, giving rise to the so-called “boson peak” in neutron and optical spectroscopies. These same modes manifest themselves as two-level systems (TLSs) causing noise and decoherence in qubits and other sensitive devices. Here, we present an experiment that uses the spin relaxation of dangling bonds at the Si/(amorphous)SiO2 interface as a probe of TLSs. We introduce a model that is able to explain the observed nonexponential electron spin inversion recovery and provides a measure of the degree of spatial localization and concentration of the TLSs close to the interface, their maximum energy, and its temperature dependence.

  • Figure
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  • Received 3 April 2019
  • Revised 23 April 2020
  • Accepted 9 September 2020

DOI:https://doi.org/10.1103/PhysRevResearch.2.033507

Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI.

Published by the American Physical Society

Physics Subject Headings (PhySH)

Condensed Matter, Materials & Applied Physics

Authors & Affiliations

M. Belli1, M. Fanciulli2,1,*, and R. de Sousa3,4

  • 1CNR-IMM, Unit of Agrate Brianza, Via C. Olivetti, 2, 20864 Agrate Brianza (MB), Italy
  • 2Dipartmento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, Via R. Cozzi 53, 20126 Milano, Italy
  • 3Department of Physics and Astronomy, University of Victoria, Victoria, British Columbia, Canada V8W 2Y2
  • 4Centre for Advanced Materials and Related Technology, University of Victoria, Victoria, British Columbia, Canada V8W 2Y2

  • *marco.fanciulli@unimib.it

Article Text

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Issue

Vol. 2, Iss. 3 — September - November 2020

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Images

  • Figure 1
    Figure 1

    Scanning electron microscope images of the two systems under investigation. Images on the left refer to sample A, whereas images on the right refer to sample B. The images were taken on twin samples obtained from the same batches of the ones used for magnetic resonance investigations.

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  • Figure 2
    Figure 2

    Comparison between a single exponential inversion recovery fit at 5 K for sample B and a fit according to the model outlined in Eq. (8). Fits for sample A had slightly larger χr2 (Table 2).

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It is not necessary to obtain permission to reuse this article or its components as it is available under the terms of the Creative Commons Attribution 4.0 International license. This license permits unrestricted use, distribution, and reproduction in any medium, provided attribution to the author(s) and the published article's title, journal citation, and DOI are maintained. Please note that some figures may have been included with permission from other third parties. It is your responsibility to obtain the proper permission from the rights holder directly for these figures.

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